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FQU7P06TU PDF预览

FQU7P06TU

更新时间: 2024-02-19 15:02:50
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
8页 472K
描述
Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

FQU7P06TU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-251包装说明:IPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.29
雪崩能效等级(Eas):90 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):5.4 A
最大漏极电流 (ID):5.4 A最大漏源导通电阻:0.451 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):28 W
最大脉冲漏极电流 (IDM):21.6 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQU7P06TU 数据手册

 浏览型号FQU7P06TU的Datasheet PDF文件第2页浏览型号FQU7P06TU的Datasheet PDF文件第3页浏览型号FQU7P06TU的Datasheet PDF文件第4页浏览型号FQU7P06TU的Datasheet PDF文件第5页浏览型号FQU7P06TU的Datasheet PDF文件第6页浏览型号FQU7P06TU的Datasheet PDF文件第7页 
April 2013  
FQD7P06  
P-Channel QFET MOSFET  
®
- 60 V, - 5.4 A, 450 m  
Description  
Features  
This P-Channel enhancement mode power MOSFET is  
produced using Fairchild Semiconductor®’s proprietary  
planar stripe and DMOS technology. This advanced  
MOSFET technology has been especially tailored to reduce  
on-state resistance, and to provide superior switching  
performance and high avalanche energy strength. These  
devices are suitable for switched mode power supplies,  
audio amplifier, DC motor control, and variable switching  
power applications.  
- 5.4 A, - 60 V, RDS(on) = 450 m(Max.) @ VGS = - 10 V,  
D = - 2.7 A  
I
Low Gate Charge (Typ. 6.3 nC)  
Low Crss (Typ. 25 pF)  
100% Avalanche Tested  
S
D
G  
G
D-PAK  
S
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VDSS  
Parameter  
FQD7P06  
-60  
Unit  
V
Drain-Source Voltage  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
Drain Current  
-5.4  
A
-3.42  
-21.6  
25  
A
IDM  
(Note 1)  
Drain Current  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
V
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
90  
mJ  
A
-5.4  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TA = 25°C) *  
2.8  
mJ  
V/ns  
W
-7.0  
2.5  
Power Dissipation (TC = 25°C)  
28  
W
- Derate above 25°C  
Operating and Storage Temperature Range  
0.22  
-55 to +150  
W/°C  
°C  
TJ, TSTG  
TL  
Maximum lead temperature for soldering purposes,  
300  
°C  
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
FQD7P06  
4.5  
Unit  
°C/W  
°C/W  
°C/W  
RJC  
RJA  
RJA  
Thermal Resistance, Junction-to-Case, Max.  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient, Max.  
50  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2001 Fairchild Semiconductor Corporation  
FQD7P06 Rev. C0  
1
www.fairchildsemi.com  

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