FQU7N10LTU

更新时间： 2024-01-20 10:23:09

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲局域网
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FQU7N10LTU 数据手册

December 2000

QFET

FQD7N10 / FQU7N10

100V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

•

5.8A, 100V, R

= 0.35Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 5.8 nC)

Low Crss ( typical 10 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology is especially tailored to minimize

on-state

resistance,

provide

superior

switching

performance, and withstand high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as audio

amplifiers, high efficiency switching DC/DC converters, and

DC motor control.

! "

I-PAK

FQU Series

D-PAK

FQD Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQD7N10 / FQU7N10

Units

Drain-Source Voltage

100

5.8

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

3.67

23.2

± 25

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

5.8

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

2.5

V/ns

dv/dt

6.0

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.2

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

5.0

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A2, December 2000

12 3 4 5 6 7...9

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