是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | TO-251 | 包装说明: | IPAK-3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.31 | 雪崩能效等级(Eas): | 73 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 5.3 A | 最大漏源导通电阻: | 0.69 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
湿度敏感等级: | NOT APPLICABLE | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT APPLICABLE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 21 A |
认证状态: | COMMERCIAL | 表面贴装: | NO |
端子面层: | MATTE TIN | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQU7N20TU-NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FQU7N30 | FAIRCHILD |
获取价格 |
300V N-Channel MOSFET | |
FQU7N30TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Met | |
FQU7P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET | |
FQU7P06TU | ROCHESTER |
获取价格 |
5.4A, 60V, 0.451ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | |
FQU7P06TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Me | |
FQU7P06TU_NB82048 | FAIRCHILD |
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Transistor | |
FQU7P20 | FAIRCHILD |
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200V P-Channel MOSFET | |
FQU7P20TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Me | |
FQU7P20TU_AM002 | FAIRCHILD |
获取价格 |
Transistor |