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FQU7N20L PDF预览

FQU7N20L

更新时间: 2024-02-20 05:29:18
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 573K
描述
200V LOGIC N-Channel MOSFET

FQU7N20L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):5.3 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
子类别:FET General Purpose Power表面贴装:NO
Base Number Matches:1

FQU7N20L 数据手册

 浏览型号FQU7N20L的Datasheet PDF文件第2页浏览型号FQU7N20L的Datasheet PDF文件第3页浏览型号FQU7N20L的Datasheet PDF文件第4页浏览型号FQU7N20L的Datasheet PDF文件第5页浏览型号FQU7N20L的Datasheet PDF文件第6页浏览型号FQU7N20L的Datasheet PDF文件第7页 
December 2000  
TM  
QFET  
FQD7N20L / FQU7N20L  
200V LOGIC N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
5.5A, 200V, R  
= 0.75@V = 10 V  
DS(on) GS  
Low gate charge ( typical 6.8 nC)  
Low Crss ( typical 8.5 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
This advanced technology is especially tailored to minimize  
on-state  
resistance,  
provide  
superior  
switching  
performance, and withstand high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for high efficiency switching DC/DC converters,  
switch mode power supplies, and motor control.  
Low level gate drive requirement allowing direct  
operation from logic drivers  
D
!
D
"
! "  
"
!
G
"
I-PAK  
FQU Series  
D-PAK  
FQD Series  
G
S
G
D
!
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQD7N20L / FQU7N20L  
Units  
V
V
I
Drain-Source Voltage  
200  
5.5  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
3.48  
22  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 20  
73  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
5.5  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
4.5  
mJ  
V/ns  
W
AR  
dv/dt  
5.5  
Power Dissipation (T = 25°C) *  
2.5  
P
A
D
Power Dissipation (T = 25°C)  
45  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.36  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
1/8from case for 5 seconds  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.78  
50  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2000 Fairchild Semiconductor International  
Rev. A2, December 2000  

FQU7N20L 替代型号

型号 品牌 替代类型 描述 数据表
FQD7N20LTF FAIRCHILD

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