是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 5.3 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 45 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FQD7N20LTF | FAIRCHILD |
功能相似 ![]() |
暂无描述 |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQU7N20L_08 | FAIRCHILD |
获取价格 |
200V LOGIC N-Channel MOSFET |
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FQU7N20LTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.78ohm, 1-Element, N-Channel, Silicon, Me |
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FQU7N20TU | ROCHESTER |
获取价格 |
5.3A, 200V, 0.69ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 |
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FQU7N20TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.3A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Me |
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FQU7N20TU-NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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FQU7N30 | FAIRCHILD |
获取价格 |
300V N-Channel MOSFET |
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FQU7N30TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.5A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Met |
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FQU7P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET |
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FQU7P06TU | ROCHESTER |
获取价格 |
5.4A, 60V, 0.451ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 |
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FQU7P06TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Me |
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