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FQU6P25TU

更新时间： 2024-02-26 14:45:02
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 512K
描述
Power Field-Effect Transistor, 4.7A I(D), 250V, 1.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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FQU6P25TU 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-251包装说明：IPAK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.7
雪崩能效等级（Eas）：540 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：250 V最大漏极电流 (Abs) (ID)：4.7 A
最大漏极电流 (ID)：4.7 A最大漏源导通电阻：1.1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-251
JESD-30 代码：R-PSIP-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：55 W
最大脉冲漏极电流 (IDM)：18.8 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQU6P25TU 数据手册

 浏览型号FQU6P25TU的Datasheet PDF文件第2页浏览型号FQU6P25TU的Datasheet PDF文件第3页浏览型号FQU6P25TU的Datasheet PDF文件第4页浏览型号FQU6P25TU的Datasheet PDF文件第5页浏览型号FQU6P25TU的Datasheet PDF文件第6页浏览型号FQU6P25TU的Datasheet PDF文件第7页 
                                                                                                                                                                                                                                                               
                                                                                                             
                                                                                                             
                                                                                                               
                                                                                                                
                                                                                                                                                                                                                                                               
                                                                                                                                                                                                                                                               
April 2000  
TM  
QFET  
FQD6P25 / FQU6P25  
250V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters.  
•
•
•
•
•
•
-4.7A, -250V, R  
= 1.1Ω @V = -10 V  
DS(on) GS  
Low gate charge ( typical 21 nC)  
Low Crss ( typical 20 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
S
!
D
ꢀ
ꢀ
G!  
ꢁ
ꢀ
I-PAK  
FQU Series  
D-PAK  
FQD Series  
G
S
ꢀ
G
D
S
!
D
Absolute Maximum Ratings  
ꢀꢀ  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQD6P25 / FQU6P25  
Units  
V
V
I
Drain-Source Voltage  
-250  
-4.7  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
-3.0  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
-18.8  
±ꢀ30  
540  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
-4.7  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
5.5  
mJ  
V/ns  
W
AR  
dv/dt  
-5.5  
Power Dissipation (T = 25°C) *  
2.5  
P
A
D
Power Dissipation (T = 25°C)  
55  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.44  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8ꢀꢁfrom case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.27  
50  
Units  
°CꢁW  
°CꢁW  
°CꢁW  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θ
θ
θ
JC  
JA  
JA  
--  
--  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2000 Fairchild Semiconductor International  
Rev. A, April 2000  
1234567...9

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