Datasheet > FQU4N50TU-WS

FQU4N50TU-WS

更新时间： 2024-11-24 11:16:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	1047K
描述
N 沟道 QFET® MOSFET 500V，2.6A，2.7Ω

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FQU4N50TU-WS 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	2.14	配置：	Single
最大漏极电流 (Abs) (ID)：	2.6 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	45 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

FQU4N50TU-WS 数据手册

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与FQU4N50TU-WS相关器件

型号	品牌	获取价格	描述	数据表
FQU4P25	FAIRCHILD	获取价格	250V P-Channel MOSFET
FQU4P25TU	ROCHESTER	获取价格	3.1A, 250V, 2.1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
FQU4P40	FAIRCHILD	获取价格	400V P-Channel MOSFET
FQU4P40TU	FAIRCHILD	获取价格	暂无描述
FQU5N15	FAIRCHILD	获取价格	150V N-Channel MOSFET
FQU5N15TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.3A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
FQU5N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQU5N20L	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQU5N20LTU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Me
FQU5N20TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Met

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