是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-251 | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.88 |
其他特性: | AVALANCHE RATED, FAST SWITCHING | 雪崩能效等级(Eas): | 280 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 22.7 A | 最大漏极电流 (ID): | 22.7 A |
最大漏源导通电阻: | 0.045 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 44 W | 最大脉冲漏极电流 (IDM): | 90.8 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQU30N06_09 | FAIRCHILD |
获取价格 |
60V N-Channel MOSFET | |
FQU30N06L | FAIRCHILD |
获取价格 |
60V LOGIC N-Channel MOSFET | |
FQU30N06LTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 24A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Met | |
FQU30N06TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 22.7A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, M | |
FQU3N25 | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
FQU3N25TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.4A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
FQU3N30 | FAIRCHILD |
获取价格 |
300V N-Channel MOSFET | |
FQU3N30TU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.4A I(D), 300V, 2.2ohm, 1-Element, N-Channel, Silicon, Met | |
FQU3N40 | FAIRCHILD |
获取价格 |
400V N-Channel MOSFET | |
FQU3N40TU | ROCHESTER |
获取价格 |
2A, 400V, 3.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 |