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FQU30N06 PDF预览

FQU30N06

更新时间: 2024-11-07 22:25:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 662K
描述
60V N-Channel MOSFET

FQU30N06 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-251包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.88
其他特性:AVALANCHE RATED, FAST SWITCHING雪崩能效等级(Eas):280 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):22.7 A最大漏极电流 (ID):22.7 A
最大漏源导通电阻:0.045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):44 W最大脉冲漏极电流 (IDM):90.8 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQU30N06 数据手册

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May 2001  
TM  
QFET  
FQD30N06 / FQU30N06  
60V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as automotive, DC/  
DC converters, and high efficiency switching for power  
management in portable and battery operated products.  
22.7A, 60V, R  
= 0.045@ V = 10V  
DS(on) GS  
Low gate charge ( typical 19 nC)  
Low Crss ( typical 40 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
o
150 C maximum junction temperature rating  
D
!
D
"
! "  
"
!
G
"
I-PAK  
FQU Series  
D-PAK  
FQD Series  
G
S
G
D
!
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQD30N06 / FQU30N06  
Units  
V
V
I
Drain-Source Voltage  
60  
22.7  
14.3  
90.8  
± 25  
280  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
22.7  
4.4  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
W
AR  
dv/dt  
7.0  
Power Dissipation (T = 25°C) *  
2.5  
P
A
D
Power Dissipation (T = 25°C)  
44  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.35  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.85  
50  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2001 Fairchild Semiconductor Corporation  
Rev. A1. May 2001  

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