5秒后页面跳转
FQU30N06_09 PDF预览

FQU30N06_09

更新时间: 2024-11-08 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 739K
描述
60V N-Channel MOSFET

FQU30N06_09 数据手册

 浏览型号FQU30N06_09的Datasheet PDF文件第2页浏览型号FQU30N06_09的Datasheet PDF文件第3页浏览型号FQU30N06_09的Datasheet PDF文件第4页浏览型号FQU30N06_09的Datasheet PDF文件第5页浏览型号FQU30N06_09的Datasheet PDF文件第6页浏览型号FQU30N06_09的Datasheet PDF文件第7页 
January 2009  
QFET®  
FQD30N06 / FQU30N06  
60V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as automotive, DC/  
DC converters, and high efficiency switching for power  
management in portable and battery operated products.  
22.7A, 60V, R  
= 0.045@ V = 10V  
DS(on) GS  
Low gate charge ( typical 19 nC)  
Low Crss ( typical 40 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
o
150 C maximum junction temperature rating  
RoHS Compliant  
D
!
D
"
! "  
"
"
!
G
I-PAK  
FQU Series  
D-PAK  
FQD Series  
G
S
G
D
S
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQD30N06 / FQU30N06  
Units  
V
V
I
Drain-Source Voltage  
60  
22.7  
14.3  
90.8  
± 25  
280  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
22.7  
4.4  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
W
AR  
dv/dt  
7.0  
Power Dissipation (T = 25°C) *  
2.5  
P
A
D
Power Dissipation (T = 25°C)  
44  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.35  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.85  
50  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2009 Fairchild Semiconductor Corporation  
Rev. A2. January 2009  

与FQU30N06_09相关器件

型号 品牌 获取价格 描述 数据表
FQU30N06L FAIRCHILD

获取价格

60V LOGIC N-Channel MOSFET
FQU30N06LTU FAIRCHILD

获取价格

Power Field-Effect Transistor, 24A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Met
FQU30N06TU FAIRCHILD

获取价格

Power Field-Effect Transistor, 22.7A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, M
FQU3N25 FAIRCHILD

获取价格

250V N-Channel MOSFET
FQU3N25TU FAIRCHILD

获取价格

Power Field-Effect Transistor, 2.4A I(D), 250V, 2.2ohm, 1-Element, N-Channel, Silicon, Met
FQU3N30 FAIRCHILD

获取价格

300V N-Channel MOSFET
FQU3N30TU FAIRCHILD

获取价格

Power Field-Effect Transistor, 2.4A I(D), 300V, 2.2ohm, 1-Element, N-Channel, Silicon, Met
FQU3N40 FAIRCHILD

获取价格

400V N-Channel MOSFET
FQU3N40TU ROCHESTER

获取价格

2A, 400V, 3.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
FQU3N50C FAIRCHILD

获取价格

500V N-Channel MOSFET