FQD3N60CTM

更新时间： 2024-11-30 10:23:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	754K
描述
600V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQD3N60CTM 数据手册

January 2006

QFET

FQD3N60C

600V N-Channel MOSFET

Features

Description

•

2.4A, 600V, R_DS(on)= 3.4Ω @V_GS= 10 V

Low gate charge ( typical 10.5 nC)

Low C_rss( typical 5 pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficiency switched mode power supplies, active power factor

correction, electronic lamp ballasts based on half bridge

topology.

Fast switching

100% avalanche tested

Improved dv/dt capability

{

ꢀ

ꢁ

{

D-PAK

FQD Series

{

Absolute Maximum Ratings

Symbol

Parameter

FQD3N60C

Unit

V_DSS

Drain-Source Voltage

Drain Current

600

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

2.4

1.5

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

9.6

±30

150

2.4

5.0

4.5

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

Power Dissipation

(T_C= 25°C)

- Derate above 25°C

0.4

W/°C

_J,T_STG

Operating and Storage Temperature Range

-55 to +150

300

°C

T_L

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

2.5

Unit

°C/W

R_θJC

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

R_θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

FQD3N60C REV. A

www.fairchildsemi.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与FQD3N60CTM相关器件

型号	品牌	获取价格	描述	数据表
FQD3N60CTM-WS	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，600 V，2.4 A，3.4 Ω，DPAK
FQD3N60TF	ROCHESTER	获取价格	2.4A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD3N60TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Met
FQD3P20	FAIRCHILD	获取价格	200V P-Channel MOSFET
FQD3P20TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.4A I(D), 200V, 2.7ohm, 1-Element, P-Channel, Silicon, Met
FQD3P50	FAIRCHILD	获取价格	500V P-Channel MOSFET
FQD3P50_09	FAIRCHILD	获取价格	500V P-Channel MOSFET
FQD3P50TF	ROCHESTER	获取价格	2.1A, 500V, 4.9ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD3P50TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Met
FQD3P50TM	FAIRCHILD	获取价格	500V P-Channel MOSFET