Datasheet > FQD3P50TM-F085

FQD3P50TM-F085

更新时间： 2024-12-01 11:11:07

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
9页	1206K
描述
500V，P 沟道 MOSFET

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FQD3P50TM-F085 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
风险等级：	0.63	雪崩能效等级（Eas）：	250 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	500 V	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	P-CHANNEL
最大脉冲漏极电流 (IDM)：	8.4 A	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	30	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FQD3P50TM-F085 数据手册

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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

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与FQD3P50TM-F085相关器件

型号	品牌	获取价格	描述	数据表
FQD45N03L	FAIRCHILD	获取价格	N-Channel Logic Level PWM Optimized Power MOSFET
FQD4N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQD4N20_09	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQD4N20L	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQD4N20LTF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Met
FQD4N20LTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Met
FQD4N20TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal
FQD4N20TF	ROCHESTER	获取价格	3A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD4N20TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal
FQD4N20TM	ONSEMI	获取价格	N 沟道，QFET® MOSFET，200V，3A，1.4Ω

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