Datasheet > FQD3N60CTM-WS

FQD3N60CTM-WS

更新时间： 2024-12-01 11:15:23

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
9页	1028K
描述
功率 MOSFET，N 沟道，QFET®，600 V，2.4 A，3.4 Ω，DPAK

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FQD3N60CTM-WS 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	PLASTIC, DPAK-3/2	Reach Compliance Code：	not_compliant
风险等级：	0.75	Is Samacsys：	N
雪崩能效等级（Eas）：	150 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	600 V
最大漏极电流 (Abs) (ID)：	2.4 A	最大漏极电流 (ID)：	2.4 A
最大漏源导通电阻：	3.4 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252AA	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	50 W
最大脉冲漏极电流 (IDM)：	9.6 A	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FQD3N60CTM-WS 数据手册

ON Semiconductor

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To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

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与FQD3N60CTM-WS相关器件

型号	品牌	获取价格	描述	数据表
FQD3N60TF	ROCHESTER	获取价格	2.4A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD3N60TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Met
FQD3P20	FAIRCHILD	获取价格	200V P-Channel MOSFET
FQD3P20TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.4A I(D), 200V, 2.7ohm, 1-Element, P-Channel, Silicon, Met
FQD3P50	FAIRCHILD	获取价格	500V P-Channel MOSFET
FQD3P50_09	FAIRCHILD	获取价格	500V P-Channel MOSFET
FQD3P50TF	ROCHESTER	获取价格	2.1A, 500V, 4.9ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD3P50TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Met
FQD3P50TM	FAIRCHILD	获取价格	500V P-Channel MOSFET
FQD3P50TM	ONSEMI	获取价格	功率 MOSFET，P 沟道，QFET®，-500 V，-2.1 A，4.9 Ω，DPAK

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