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FQD3P50TM-AM002BLT PDF预览

FQD3P50TM-AM002BLT

更新时间： 2024-12-01 11:12:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 392K
描述
功率 MOSFET，P 沟道，QFET®，-500 V，-2.1 A，4.9 Ω，DPAK

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FQD3P50TM-AM002BLT 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – P-Channel,  
QFET)  
-500 V, 4.9 W, -2.1 A  
D
G
S
DPAK3  
CASE 369AS  
FQD3P50  
Description  
S
This P−Channel enhancement mode power MOSFET is produced  
using ON Semiconductor’s proprietary planar stripe and DMOS  
technology. This advanced MOSFET technology has been especially  
tailored to reduce on−state resistance, and to provide superior  
switching performance and high avalanche energy strength. These  
devices are suitable for switched mode power supplies, active power  
factor correction (PFC), and electronic lamp ballasts.  
G
D
Features  
• −2.1 A, −500 V, R  
= 4.9 W (Max.) @ V = −10 V,  
GS  
MARKING DIAGRAM  
DS(on)  
I = −1.05 A  
D
• Low Gate Charge (Typ. 18 nC)  
• Low Crss (Typ. 9.5 pF)  
$Y&Z&3&K  
FQD  
3P50  
• 100% Avalanche Tested  
• These Devices are Pb−Free and are RoHS Compliant  
ABSOLUTE MAXIMUM RATINGS (T = 20°C unless otherwise noted)  
C
Symbol  
Parameter  
Drain−Source Voltage  
Value  
Unit  
V
V
DSS  
−500  
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Code  
= Date Code (Year and Week)  
= Lot Code  
I
D
Drain Current  
A
− Continuous (T = 25°C)  
−2.1  
−1.33  
C
− Continuous (T = 100°C)  
C
FQD3P50 = Specific Device Code  
I
Drain Current − Pulsed (Note 1)  
Gate−Source Voltage  
−8.4  
A
V
DM  
V
GSS  
30  
ORDERING INFORMATION  
E
Single Pulsed Avalanche Energy (Note 2)  
Avalanche Current (Note 1)  
250  
−2.1  
5.0  
mJ  
A
AS  
†
Device  
FQD3P50  
Package  
Shipping  
I
AR  
DPAK3  
2,500 /  
E
Repetitive Avalanche Energy (Note 1)  
Peak Diode Recovery dv/dt (Note 3)  
mJ  
V/ns  
W
AR  
(Pb−Free)  
Tape & Reel  
dv/dt  
−4.5  
2.5  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Power Dissipation (T = 25°C) (Note 4)  
P
A
D
Power Dissipation (T = 25°C)  
50  
0.4  
W
W/°C  
C
− Derate above 25°C  
Operating and Storage Temperature  
Range  
T , T  
−55 to +150  
°C  
J
STG  
T
L
300  
°C  
Maximum lead temperature for soldering  
purposes, 1/8″ from case for 5 seconds  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
2. L = 102 mH, I = −2.1 A, V = −50 V, R = 25 W, Starting T = 25°C.  
AS  
DD  
G
DSS  
J
3. I ≤ −2.7 A, di/dt ≤ 200 A/ms, V ≤ BV  
, Starting T = 25°C.  
J
SD  
DD  
4. When mounted on the minimum pad size recommended (PCB Mount).  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
April, 2022 − Rev. 5  
FQD3P50/D  
 
12345678

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