Datasheet > FQD4P40TM-AM002

FQD4P40TM-AM002

更新时间： 2024-02-10 02:59:54

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	932K
描述
P-Channel QFET® MOSFET -400V, -2.7A, 3.1Ω, TO-252 3L (DPAK), 2500-REEL

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FQD4P40TM-AM002 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
风险等级：	5.59	配置：	Single
最大漏极电流 (Abs) (ID)：	2.7 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	湿度敏感等级：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	50 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin (Sn)	Base Number Matches：	1

FQD4P40TM-AM002 数据手册

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与FQD4P40TM-AM002相关器件

型号	品牌	获取价格	描述	数据表
FQD5N15	FAIRCHILD	获取价格	150V N-Channel MOSFET
FQD5N15TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4.3A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
FQD5N15TF	ROCHESTER	获取价格	4.3A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD5N15TM	ROCHESTER	获取价格	4.3A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD5N15TM	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®， 150 V，4.3 A，800 mΩ，DPAK
FQD5N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQD5N20L	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQD5N20L_08	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQD5N20LTF	ROCHESTER	获取价格	3.8A, 200V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD5N20LTM	ROCHESTER	获取价格	3.8A, 200V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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