是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.88 |
雪崩能效等级(Eas): | 52 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 3 A | 最大漏极电流 (ID): | 3.2 A |
最大漏源导通电阻: | 1.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 30 W | 最大脉冲漏极电流 (IDM): | 12.8 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQD4N20LTF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Met | |
FQD4N20LTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Met | |
FQD4N20TF | FAIRCHILD |
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Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal | |
FQD4N20TF | ROCHESTER |
获取价格 |
3A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
FQD4N20TM | FAIRCHILD |
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Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal | |
FQD4N20TM | ONSEMI |
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N 沟道,QFET® MOSFET,200V,3A,1.4Ω | |
FQD4N20TM-SB82153 | FAIRCHILD |
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Transistor | |
FQD4N25 | FAIRCHILD |
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250V N-Channel MOSFET | |
FQD4N25TM_WS | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Meta | |
FQD4N25TM-WS | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,250 V,3 A,1.75 Ω,DPAK |