型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQD4N25TM_WS | FAIRCHILD |
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Power Field-Effect Transistor, 3A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Meta | |
FQD4N25TM-WS | ONSEMI |
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功率 MOSFET,N 沟道,QFET®,250 V,3 A,1.75 Ω,DPAK | |
FQD4N50 | FAIRCHILD |
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500V N-Channel MOSFET | |
FQD4N50_09 | FAIRCHILD |
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500V N-Channel MOSFET | |
FQD4N50TF | FAIRCHILD |
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Power Field-Effect Transistor, 2.6A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Met | |
FQD4N50TM | FAIRCHILD |
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500V N-Channel QFET®, 3LD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE | |
FQD4N50TM_WS | FAIRCHILD |
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500V N-Channel QFET®, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB, 2500/TAPE RE | |
FQD4N50TM-AM002 | FAIRCHILD |
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Transistor | |
FQD4P25 | FAIRCHILD |
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250V P-Channel MOSFET | |
FQD4P25TF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.1A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Met |