5秒后页面跳转
FQD3P50TM_F085 PDF预览

FQD3P50TM_F085

更新时间: 2024-11-30 21:10:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
8页 791K
描述
Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

FQD3P50TM_F085 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.7
雪崩能效等级(Eas):250 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):2.1 A最大漏极电流 (ID):2.1 A
最大漏源导通电阻:4.9 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):8.4 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQD3P50TM_F085 数据手册

 浏览型号FQD3P50TM_F085的Datasheet PDF文件第2页浏览型号FQD3P50TM_F085的Datasheet PDF文件第3页浏览型号FQD3P50TM_F085的Datasheet PDF文件第4页浏览型号FQD3P50TM_F085的Datasheet PDF文件第5页浏览型号FQD3P50TM_F085的Datasheet PDF文件第6页浏览型号FQD3P50TM_F085的Datasheet PDF文件第7页 
July 2013  
FQD3P50  
P-Channel QFET® MOSFET  
- 500 V, - 2.1 A, 4.9 Ω  
Description  
Features  
- 2.1 A, - 500 V, R  
ID = - 1.05 A  
= 4.9 (Max.) @ V = - 10 V,  
This P-Channel enhancement mode power MOSFET is  
produced using Fairchild Semiconductor®’s proprietary  
planar stripe and DMOS technology. This advanced  
MOSFET technology has been especially tailored to  
reduce on-state resistance, and to provide superior  
switching performance and high avalanche energy  
strength. These devices are suitable for switched mode  
power supplies, active power factor correction (PFC), and  
electronic lamp ballasts.  
DS(on)  
GS  
Low Gate Charge (Typ. 18 nC)  
Low Crss (Typ. 9.5 pF)  
100% Avalanche Tested  
S
!
D
G!  
G
S
D-PAK  
(TO252)  
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
FQD3P50  
-500  
-2.1  
Symbol  
Parameter  
Unit  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
-1.33  
-8.4  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
250  
mJ  
A
-2.1  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
5.0  
mJ  
V/ns  
W
AR  
dv/dt  
-4.5  
Power Dissipation (T = 25°C) *  
2.5  
P
A
D
Power Dissipation (T = 25°C)  
50  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.4  
W/°C  
°C  
T , T  
-55 to +150  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
FQD3P50  
2.5  
Symbol  
Parameter  
Unit  
R
R
R
Thermal Resistance, Junction-to-Case, Max.  
Thermal Resistance, Junction-to-Ambient, Max. *  
Thermal Resistance, Junction-to-Ambient, Max.  
°C/W  
°C/W  
°C/W  
θJC  
θJA  
θJA  
50  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2009 Fairchild Semiconductor Corporation  
FQD3P50 Rev. C1  
www.fairchildsemi.com  

FQD3P50TM_F085 替代型号

型号 品牌 替代类型 描述 数据表
FQD3P50TF FAIRCHILD

类似代替

Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Met

与FQD3P50TM_F085相关器件

型号 品牌 获取价格 描述 数据表
FQD3P50TM-AM002BLT ONSEMI

获取价格

功率 MOSFET,P 沟道,QFET®,-500 V,-2.1 A,4.9 Ω,DPAK
FQD3P50TM-F085 ONSEMI

获取价格

500V,P 沟道 MOSFET
FQD45N03L FAIRCHILD

获取价格

N-Channel Logic Level PWM Optimized Power MOSFET
FQD4N20 FAIRCHILD

获取价格

200V N-Channel MOSFET
FQD4N20_09 FAIRCHILD

获取价格

200V N-Channel MOSFET
FQD4N20L FAIRCHILD

获取价格

200V LOGIC N-Channel MOSFET
FQD4N20LTF FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Met
FQD4N20LTM FAIRCHILD

获取价格

Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Met
FQD4N20TF FAIRCHILD

获取价格

Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal
FQD4N20TF ROCHESTER

获取价格

3A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3