FQD11P06TM

更新时间： 2024-02-12 02:43:22

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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中文翻译

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数据手册
替代型号

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FQD11P06TM 数据手册

QFET

FQD11P06 / FQU11P06

60V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as automotive,

DC/DC converters, and high efficiency switching for power

management in portable and battery operated products.

•

-9.4A, -60V, R

= 0.185Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 13 nC)

Low Crss ( typical 45 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

I-PAK

FQU Series

D-PAK

FQD Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQD11P06 / FQU11P06

Units

Drain-Source Voltage

-60

-9.4

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

-5.95

-37.6

± 30

160

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

-9.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

3.8

V/ns

dv/dt

-7.0

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.3

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8!"from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

3.28

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. B4, October 2002

12 3 4 5 6 7...9

中文翻译

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FQD11P06TM 替代型号

型号	品牌	替代类型	描述	数据表
FQD11P06TF	FAIRCHILD	类似代替	Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Me
STD10PF06T4	STMICROELECTRONICS	功能相似	P-CHANNEL 60V - 0.18 W - 10A IPAK/DPAK STripF
FQD11P06	FAIRCHILD	功能相似	60V P-Channel MOSFET

与FQD11P06TM相关器件

型号	品牌	获取价格	描述	数据表
FQD11P06TM_SB82077	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Me
FQD1200MK5	NXP	获取价格	Hybrid analog/digital video module
FQD12N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQD12N20L	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQD12N20LTM	FAIRCHILD	获取价格	200V Logic Level N-Channel MOSFET
FQD12N20LTM	ONSEMI	获取价格	功率 MOSFET，N 沟道，逻辑电平，QFET®，200 V，9.0 A，280 mΩ，
FQD12N20LTM_F085	ONSEMI	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Meta
FQD12N20LTM_F085	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Meta
FQD12N20LTM-F085	ONSEMI	获取价格	Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconduc
FQD12N20TF	ROCHESTER	获取价格	9A, 200V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

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