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FQB10N20C PDF预览

FQB10N20C

更新时间: 2024-11-17 22:25:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 609K
描述
200V N-Channel MOSFET

FQB10N20C 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
其他特性:FAST SWITCHING雪崩能效等级(Eas):210 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (ID):9.5 A
最大漏源导通电阻:0.36 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):38 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQB10N20C 数据手册

 浏览型号FQB10N20C的Datasheet PDF文件第2页浏览型号FQB10N20C的Datasheet PDF文件第3页浏览型号FQB10N20C的Datasheet PDF文件第4页浏览型号FQB10N20C的Datasheet PDF文件第5页浏览型号FQB10N20C的Datasheet PDF文件第6页浏览型号FQB10N20C的Datasheet PDF文件第7页 
TM  
QFET  
FQB10N20C/FQI10N20C  
200V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters,  
switch mode power supplies, DC-AC converters for  
uninterrupted power supplies and motor controls.  
9.5A, 200V, R  
= 0.36@V = 10 V  
DS(on) GS  
Low gate charge ( typical 20 nC)  
Low Crss ( typical 40.5 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
D
"
! "  
"
"
!
G
I2-PAK  
FQI Series  
D2-PAK  
FQB Series  
!
S
G
S
G D S  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB10N20C/FQI10N20C  
Units  
V
V
I
Drain-Source Voltage  
200  
9.5  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
6.0  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
38  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
210  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
9.5  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
7.2  
mJ  
V/ns  
W
AR  
dv/dt  
5.5  
P
Power Dissipation (T = 25°C)  
72  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.57  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
1.74  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
62.5  
©2003 Fairchild Semiconductor Corporation  
Rev. A, August 2003  

FQB10N20C 替代型号

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