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FQB11N40CTM PDF预览

FQB11N40CTM

更新时间： 2024-11-19 11:13:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 1041K
描述
功率 MOSFET，N 沟道，QFET®， 400 V，10.5 A，530 mΩ，D2PAK

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中文翻译

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FQB11N40CTM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.67
其他特性：FAST SWITCHING雪崩能效等级（Eas）：360 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：400 V最大漏极电流 (Abs) (ID)：10.5 A
最大漏极电流 (ID)：10.5 A最大漏源导通电阻：0.53 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：135 W
最大脉冲漏极电流 (IDM)：42 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FQB11N40CTM 数据手册

 浏览型号FQB11N40CTM的Datasheet PDF文件第2页浏览型号FQB11N40CTM的Datasheet PDF文件第3页浏览型号FQB11N40CTM的Datasheet PDF文件第4页浏览型号FQB11N40CTM的Datasheet PDF文件第5页浏览型号FQB11N40CTM的Datasheet PDF文件第6页浏览型号FQB11N40CTM的Datasheet PDF文件第7页 
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 		P-Channel QFET MOSFET -60 V, -11.4 A, 175 mΩ
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 		功率 MOSFET，P 沟道，QFET®，-60 V，-11.4 A，175 mΩ，D2P
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