FQB12N60

更新时间： 2024-11-08 22:25:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	542K
描述
600V N-Channel MOSFET

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中文翻译

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数据手册
替代型号

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FQB12N60 数据手册

April 2000

QFET

FQB12N60 / FQI12N60

600V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

•

10.5A, 600V, R

= 0.7 Ω @ V = 10 V

DS(on) GS

Low gate charge ( typical 42 nC)

Low Crss ( typical 25 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

G !

D²-PAK

FQB Series

I²-PAK

FQI Series

Absolute Maximum Ratings

ꢀꢀ

T = 25°C unless otherwise noted

Symbol

Parameter

FQB12N60 / FQI12N60

Units

Drain-Source Voltage

600

10.5

6.7

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

±ꢀ30

790

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

10.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

dv/dt

4.5

Power Dissipation (T = 25°C) *

3.13

180

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

1.43

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.7

Units

°CꢁW

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, April 2000

12 3 4 5 6 7...9

中文翻译

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FQB12N60 替代型号

型号	品牌	替代类型	描述	数据表
FQB12N50	FAIRCHILD	功能相似	500V N-Channel MOSFET
FQB12N60C	FAIRCHILD	功能相似	600V N-Channel MOSFET

与FQB12N60相关器件

型号	品牌	获取价格	描述	数据表
FQB12N60C	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQB12N60CTM	ROCHESTER	获取价格	12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3
FQB12P10	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQB12P20	FAIRCHILD	获取价格	200V P-Channel MOSFET
FQB12P20_08	FAIRCHILD	获取价格	200V P-Channel MOSFET
FQB12P20TM	FAIRCHILD	获取价格	FQB12P20 / FQI12P20 200V P-Channel MOSFET
FQB12P20TM	ONSEMI	获取价格	功率 MOSFET，P 沟道，QFET®，-200 V，-11.5 A，470 mΩ，D2
FQB12P20TM_NL	FAIRCHILD	获取价格	暂无描述
FQB13N06	FAIRCHILD	获取价格	60V N-Channel MOSFET
FQB13N06L	FAIRCHILD	获取价格	60V LOGIC N-Channel MOSFET