Datasheet > FQB13N50C_08

FQB13N50C_08

更新时间： 2024-11-01 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	973K
描述
500V N-Channel MOSFET

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FQB13N50C_08 数据手册

October 2008

QFET^®

FQB13N50C/FQI13N50C

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

•

13A, 500V, R

= 0.48Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 43nC)

Low Crss ( typical 20pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS Compliant

•

! "

I²-PAK

D²-PAK

FQB Series

FQI Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB13N50C / FQI13N50C

Units

Drain-Source Voltage

500

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

860

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

19.5

4.5

V/ns

dv/dt

Power Dissipation (T = 25°C)

195

- Derate above 25°C

Operating and Storage Temperature Range

1.56

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.64

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minium pad size recommended (PCB Mount).

Rev. A1, October 2008

12 3 4 5 6 7...9

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