Datasheet > FQB11P06TM

FQB11P06TM

更新时间： 2024-11-19 11:12:39

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
10页	1035K
描述
功率 MOSFET，P 沟道，QFET®，-60 V，-11.4 A，175 mΩ，D2PAK

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中文翻译

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技术参数
数据手册
替代型号

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FQB11P06TM 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	0.98
雪崩能效等级（Eas）：	160 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	11.4 A	最大漏极电流 (ID)：	11.4 A
最大漏源导通电阻：	0.175 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	53 W
最大脉冲漏极电流 (IDM)：	45.6 A	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FQB11P06TM 数据手册

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中文翻译

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FQB11P06TM 替代型号

型号	品牌	替代类型	描述	数据表
FQB11P06	FAIRCHILD	功能相似	60V P-Channel MOSFET

与FQB11P06TM相关器件

型号	品牌	获取价格	描述	数据表
FQB12N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQB12N20L	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQB12N20LTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11.6A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, M
FQB12N20TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, M
FQB12N50	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQB12N60	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQB12N60C	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQB12N60CTM	ROCHESTER	获取价格	12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3
FQB12P10	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQB12P20	FAIRCHILD	获取价格	200V P-Channel MOSFET

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