FQB12N50

更新时间： 2024-11-08 22:25:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	618K
描述
500V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

FQB12N50 数据手册

QFET

FQB12N50 / FQI12N50

500V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies,

power factor correction, electronic lamp ballasts based on

half bridge.

•

12.1A, 500V, R

= 0.49Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 39 nC)

Low Crss ( typical 25 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

D²-PAK

FQB Series

I²-PAK

FQI Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB12N50 / FQI12N50

Units

Drain-Source Voltage

500

12.1

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

7.6

(Note 1)

Drain Current

- Pulsed

48.4

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

878

12.1

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

17.9

V/ns

dv/dt

4.5

Power Dissipation (T = 25°C) *

3.13

Power Dissipation (T = 25°C)

179

- Derate above 25°C

Operating and Storage Temperature Range

1.43

W/°C

°C

T , T

-55 to +150

stg

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.7

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, May 2002

12 3 4 5 6 7...9

中文翻译

下载PDF

FQB12N50 替代型号

型号	品牌	替代类型	描述	数据表
FQB12N60C	FAIRCHILD	功能相似	600V N-Channel MOSFET

与FQB12N50相关器件

型号	品牌	获取价格	描述	数据表
FQB12N60	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQB12N60C	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQB12N60CTM	ROCHESTER	获取价格	12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3
FQB12P10	FAIRCHILD	获取价格	100V P-Channel MOSFET
FQB12P20	FAIRCHILD	获取价格	200V P-Channel MOSFET
FQB12P20_08	FAIRCHILD	获取价格	200V P-Channel MOSFET
FQB12P20TM	FAIRCHILD	获取价格	FQB12P20 / FQI12P20 200V P-Channel MOSFET
FQB12P20TM	ONSEMI	获取价格	功率 MOSFET，P 沟道，QFET®，-200 V，-11.5 A，470 mΩ，D2
FQB12P20TM_NL	FAIRCHILD	获取价格	暂无描述
FQB13N06	FAIRCHILD	获取价格	60V N-Channel MOSFET