Datasheet > FQB11N40TM

FQB11N40TM

更新时间： 2024-11-18 12:26:43

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描述
400V N-Channel MOSFET

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数据手册

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FQB11N40TM 数据手册

November 2001

FQB11N40 / FQI11N40

400V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply,

electronic lamp ballast based on half bridge.

•

11.4A, 400V, R

= 0.48Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 27 nC)

Low Crss ( typical 20 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

G !

D²-PAK

FQB Series

I²-PAK

FQI Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB11N40 / FQI11N40

Units

Drain-Source Voltage

400

11.4

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

7.2

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

520

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

11.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

14.7

4.5

dv/dt

Power Dissipation (T = 25°C) *

3.13

147

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

1.18

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.85

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. B, November 2001

12 3 4 5 6 7...9

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