5秒后页面跳转
FQB11P06_04 PDF预览

FQB11P06_04

更新时间: 2024-11-18 03:37:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 654K
描述
60V P-Channel MOSFET

FQB11P06_04 数据手册

 浏览型号FQB11P06_04的Datasheet PDF文件第2页浏览型号FQB11P06_04的Datasheet PDF文件第3页浏览型号FQB11P06_04的Datasheet PDF文件第4页浏览型号FQB11P06_04的Datasheet PDF文件第5页浏览型号FQB11P06_04的Datasheet PDF文件第6页浏览型号FQB11P06_04的Datasheet PDF文件第7页 
®
QFET  
FQB11P06 / FQI11P06  
60V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
-11.4A, -60V, R  
= 0.175@V = -10 V  
DS(on) GS  
Low gate charge ( typical 13 nC)  
Low Crss ( typical 45 pF)  
Fast switching  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand a high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for low voltage applications such as automotive,  
DC/DC converters, and high efficiency switching for power  
management in portable and battery operated products.  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
S
!
D
G
!
I2-PAK  
D2-PAK  
FQB Series  
G
S
FQI Series  
G D S  
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB11P06 / FQI11P06  
Units  
V
A
A
A
V
mJ  
A
mJ  
V/ns  
W
V
I
Drain-Source Voltage  
Drain Current  
-60  
-11.4  
-8.05  
-45.6  
± 25  
160  
-11.4  
5.3  
-7.0  
DSS  
- Continuous (T = 25°C)  
D
C
- Continuous (T = 100°C)  
C
I
(Note 1)  
Drain Current  
Gate-Source Voltage  
- Pulsed  
DM  
V
E
I
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (T = 25°C) *  
AR  
E
AR  
dv/dt  
3.13  
53  
P
A
D
Power Dissipation (T = 25°C)  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.35  
-55 to +175  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
T
300  
°C  
L
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
--  
Max  
2.85  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2004 Fairchild Semiconductor Corporation  
Rev. B5, March 2004  

与FQB11P06_04相关器件

型号 品牌 获取价格 描述 数据表
FQB11P06TM FAIRCHILD

获取价格

P-Channel QFET MOSFET -60 V, -11.4 A, 175 mΩ
FQB11P06TM ROCHESTER

获取价格

11.4A, 60V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
FQB11P06TM ONSEMI

获取价格

功率 MOSFET,P 沟道,QFET®,-60 V,-11.4 A,175 mΩ,D2P
FQB12N20 FAIRCHILD

获取价格

200V N-Channel MOSFET
FQB12N20L FAIRCHILD

获取价格

200V LOGIC N-Channel MOSFET
FQB12N20LTM FAIRCHILD

获取价格

Power Field-Effect Transistor, 11.6A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, M
FQB12N20TM FAIRCHILD

获取价格

Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, M
FQB12N50 FAIRCHILD

获取价格

500V N-Channel MOSFET
FQB12N60 FAIRCHILD

获取价格

600V N-Channel MOSFET
FQB12N60C FAIRCHILD

获取价格

600V N-Channel MOSFET