Datasheet > FQB11P06_04

FQB11P06_04

更新时间： 2024-11-06 03:37:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	654K
描述
60V P-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQB11P06_04 数据手册

QFET

FQB11P06 / FQI11P06

60V P-Channel MOSFET

General Description

Features

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

•

-11.4A, -60V, R

= 0.175Ω @V = -10 V

DS(on) GS

Low gate charge ( typical 13 nC)

Low Crss ( typical 45 pF)

Fast switching

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as automotive,

DC/DC converters, and high efficiency switching for power

management in portable and battery operated products.

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

●

▶

●

▲

I²-PAK

D²-PAK

FQB Series

FQI Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB11P06 / FQI11P06

Units

V/ns

Drain-Source Voltage

Drain Current

-60

-11.4

-8.05

-45.6

± 25

160

-11.4

5.3

-7.0

DSS

- Continuous (T = 25°C)

- Continuous (T = 100°C)

(Note 1)

Drain Current

Gate-Source Voltage

- Pulsed

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T = 25°C) *

dv/dt

3.13

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.35

-55 to +175

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.85

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. B5, March 2004

12 3 4 5 6 7...9

中文翻译

下载PDF

与FQB11P06_04相关器件

型号	品牌	获取价格	描述	数据表
FQB11P06TM	FAIRCHILD	获取价格	P-Channel QFET MOSFET -60 V, -11.4 A, 175 mÎ©
FQB11P06TM	ROCHESTER	获取价格	11.4A, 60V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
FQB11P06TM	ONSEMI	获取价格	功率 MOSFET，P 沟道，QFET®，-60 V，-11.4 A，175 mΩ，D2P
FQB12N20	FAIRCHILD	获取价格	200V N-Channel MOSFET
FQB12N20L	FAIRCHILD	获取价格	200V LOGIC N-Channel MOSFET
FQB12N20LTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11.6A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, M
FQB12N20TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11.6A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, M
FQB12N50	FAIRCHILD	获取价格	500V N-Channel MOSFET
FQB12N60	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQB12N60C	FAIRCHILD	获取价格	600V N-Channel MOSFET