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FQB11N40C PDF预览

FQB11N40C

更新时间: 2024-11-08 21:55:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 623K
描述
400V N-Channel MOSFET

FQB11N40C 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.17
其他特性:FAST SWITCHING雪崩能效等级(Eas):360 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:400 V最大漏极电流 (ID):10.5 A
最大漏源导通电阻:0.53 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):42 A
认证状态:Not Qualified表面贴装:YES
端子面层:NOT SPECIFIED端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQB11N40C 数据手册

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®
QFET  
FQB11N40C/FQI11N40C  
400V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction, electronic lamp ballasts  
based on half bridge topology.  
10.5 A, 400V, R  
=
0.5 @V = 10 V  
GS  
DS(on)  
Low gate charge ( typical 28 nC)  
Low Crss ( typical 85pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
D
"
! "  
I2-PAK  
FQI Series  
"
"
D2-PAK  
FQB Series  
!
G
G
S
G D S  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQB11N40C / FQI11N40C  
Units  
V
V
I
Drain-Source Voltage  
400  
10.5  
6.6  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
42  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
360  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
11  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
13.5  
4.5  
mJ  
V/ns  
W
AR  
dv/dt  
P
Power Dissipation (T = 25°C)  
135  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
1.07  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
Max  
0.93  
40  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
-
-
-
θJC  
θJA  
θJA  
62.5  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2004 Fairchild Semiconductor Corporation  
Rev. A, January 2004  

FQB11N40C 替代型号

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