Datasheet > FQB10N60C

FQB10N60C

更新时间： 2024-09-15 22:25:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	615K
描述
600V N-Channel MOSFET

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FQB10N60C 数据手册

QFET

FQB10N60C / FQI10N60C

600V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

•

9.5A, 600V, R

= 0.73Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 44 nC)

Low Crss ( typical 18 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

I²-PAK

FQI Series

D²-PAK

FQB Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQB10N60C / FQI10N60C

Units

Drain-Source Voltage

600

9.5

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

3.3

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

700

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

9.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

15.6

4.5

V/ns

dv/dt

Power Dissipation (T = 25°C)*

3.13

156

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

1.25

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.8

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

θJC

θJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, October 2003

12 3 4 5 6 7...9

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