Datasheet > FPD5W1KX

FPD5W1KX

更新时间： 2024-09-27 03:28:23

品牌	Logo	应用领域
EUDYNA		光电二极管光电二极管
页数	文件大小	规格书
6页	184K
描述
Avalanche Photodiode

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中文翻译

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技术参数
数据手册

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FPD5W1KX 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.61	Base Number Matches：	1

FPD5W1KX 数据手册

Avalanche Photodiode

FPD5W1KX

FEATURES

• Data rates up to 2.5Gb/s

• Operating temperature: -40°c to 85°C

• Photosensitive diameter: 30µm

• High cut-off frequency: 3.0GHz at M=5 and 10

• Large gain-bandwidth product: 40GHz

• Low dark current: 20nA

• Low multipled dark current: 3nA

• Low excess noise factor: 5 at M=10

APPLICATIONS

• 2.4 Gb/s optical transmission systems

DESCRIPTION

The FPD5W1KX is a wide bandwidth, high sensitivity avalanche photodiode (APD)

optimized for operation at 1550nm. This APD is designed for use in optical transmission

systems operating at a giga-bit-rate, above 2.4Gb/s, and for long transmission distances.

The APD chip has a photosensitive area diameter of 30µm. Fujitsu’s advanced InP

material technology realizes a high reliability planar structure device with wide bandwidth

(large gain-bandwidth product) as well as low noise characteristics. A single-mode fiber is

aligned to a hermetically sealed APD through a highly stable optical coupling system.

ABSOLUTE MAXIMUM RATINGS (T =25°C, unless otherwise specified)

Ratings

Parameter

Storage Temperature

Operating Temperature

Symbol

Unit

°C

Min.

Max.

-40

+85

stg

-40

+85

3(peak)

°C

APD Reverse Current

APD Forward Current

APD Reverse Voltage

Note: Since VB may vary from device-to-device, VB data is attached to each device for reference.

Edition 1.1

July 2004

12 3 4 5 6

中文翻译

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