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FPD750P100 PDF预览

FPD750P100

更新时间： 2024-02-17 22:19:52
品牌 Logo 应用领域
FILTRONIC 晶体晶体管
页数 文件大小 规格书
3页 183K
描述
0.5W PACKAGED POWER PHEMT

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中文翻译

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FPD750P100 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.06Base Number Matches：1

FPD750P100 数据手册

 浏览型号FPD750P100的Datasheet PDF文件第2页浏览型号FPD750P100的Datasheet PDF文件第3页 
FPD750P100  
0.5W PACKAGED POWER PHEMT  
• FEATURES  
♦ 26.5 dBm Linear Output Power  
♦ 18.5 dB Power Gain at 2 GHz  
♦ 11.5 dB Maximum Stable Gain at 10 GHz  
♦ 36 dBm Output IP3  
♦ 45% Power-Added Efficiency at 2 GHz  
• DESCRIPTION AND APPLICATIONS  
The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor  
(PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepper-  
based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize  
performance. The epitaxial structure and processing have been optimized for reliable high-power  
applications. The FPD750P100 also features Si3N4 passivation and is also available in die form and  
in the low cost plastic SOT89, SOT343, and DFN plastic packages.  
Typical applications include commercial and other narrowband and broadband high-performance  
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output  
amplifiers, and medium-haul digital radio transmitters.  
• ELECTRICAL SPECIFICATIONS AT 22°C  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max Units  
UNLESS OTHERWISE NOTED, RF SPECIFICATIONS MEASURED AT f = 2 GHz USING CW SIGNAL  
Power at 1dB Gain Compression  
Power Gain at P1dB  
Maximum Stable Gain (S21/S12)  
P1dB  
G1dB  
SSG  
VDS = 8 V; IDS = 50% IDSS  
VDS = 8 V; IDS = 50% IDSS  
VDS = 8 V; IDS = 50% IDSS  
f = 2 GHz  
25.0  
18.0  
26.5  
18.5  
dBm  
dB  
22.0  
10.5  
23.0  
11.5  
45  
dB  
dB  
%
f = 10 GHz  
Power-Added Efficiency  
PAE  
IP3  
VDS = 8 V; IDS = 50% IDSS  
;
POUT = P1dB  
Output Third-Order Intercept Point  
VDS = 8V; IDS = 50% IDSS  
Matched for optimal power  
(from 15 to 5 dB below P1dB  
)
36  
dBm  
Saturated Drain-Source Current  
Maximum Drain-Source Current  
Transconductance  
Gate-Source Leakage Current  
Pinch-Off Voltage  
IDSS  
IMAX  
GM  
IGSO  
|VP|  
VDS = 1.3 V; VGS = 0 V  
VDS = 1.3 V; VGS ≅ +1 V  
VDS = 1.3 V; VGS = 0 V  
VGS = -5 V  
VDS = 1.3 V; IDS = 0.75 mA  
IGD = 0.75 mA  
185  
230  
375  
200  
1
1.0  
16.0  
48  
280  
mA  
mA  
mS  
µA  
V
15  
1.3  
0.7  
14.5  
Gate-Drain Breakdown Voltage  
Thermal Resistivity (see Notes)  
|VBDGD  
|
V
V
DS > 6V  
θJC  
°C/W  
Phone: +1 408 850-5790  
Fax: +1 408 850-5766  
http://www.filtronic.co.uk/semis  
Released: 6/27/05  
Email: sales@filcsi.com  
123

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