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FPD7612

更新时间： 2024-09-27 22:40:55
品牌 Logo 应用领域
FILTRONIC 晶体晶体管
页数 文件大小 规格书
2页 191K
描述
GENERAL PURPOSE PHEMT

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中文翻译

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FPD7612 技术参数

生命周期：Transferred包装说明：,
Reach Compliance Code：unknown风险等级：5.6
Is Samacsys：NBase Number Matches：1

FPD7612 数据手册

 浏览型号FPD7612的Datasheet PDF文件第2页 
FPD7612  
GENERAL PURPOSE PHEMT  
DRAIN  
BOND  
• FEATURES  
PAD (2X)  
♦ 19 dBm Linear Output Power at 12 GHz  
♦ 12 dB Power Gain at 12 GHz  
♦ 17 dB Maximum Stable Gain at 12 GHz  
♦ 11 dB Maximum Stable Gain at 18 GHz  
♦ 45% Power-Added Efficiency  
SOURCE  
BOND  
PAD (2x)  
GATE  
BOND  
PAD (2X)  
DIE SIZE (µm): 520 x 400  
DIE THICKNESS: 75 µm  
BONDING PADS (
µm): >48 x 48  
• DESCRIPTION AND APPLICATIONS  
The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),  
featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high-resolution stepper-based  
photolithography. The recessed and offset Gate structure minimizes parasitics to optimize  
performance. The epitaxial structure and processing have been optimized for reliable medium-  
power applications. The FPD7612 also features Si3N4 passivation and is available in a low cost  
plastic package.  
Typical applications include commercial and other narrowband and broadband high-performance  
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output  
amplifiers, and medium-haul digital radio transmitters.  
• ELECTRICAL SPECIFICATIONS AT 22°C  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max Units  
RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL  
Power at 1dB Gain Compression  
Power Gain at P1dB  
P1dB  
G1dB  
PAE  
VDS = 5 V; IDS = 50% IDSS  
VDS = 5 V; IDS = 50% IDSS  
18  
10.5  
19  
12.0  
45  
dBm  
dB  
%
Power-Added Efficiency  
V
DS = 5V; IDS = 50% IDSS  
;
P
OUT = P1dB  
Maximum Stable Gain (S21/S12)  
f = 12 GHz  
SSG  
V
DS = 5 V; IDS = 50% IDSS  
16  
9.5  
17  
11  
dB  
f = 24 GHz  
Saturated Drain-Source Current  
Maximum Drain-Source Current  
Transconductance  
Gate-Source Leakage Current  
Pinch-Off Voltage  
Gate-Source Breakdown Voltage  
Gate-Drain Breakdown Voltage  
Thermal Resistivity (see Notes)  
IDSS  
IMAX  
GM  
IGSO  
|VP|  
VDS = 1.3 V; VGS = 0 V  
VDS = 1.3 V; VGS ≅ +1 V  
VDS = 1.3 V; VGS = 0 V  
VGS = -5 V  
VDS = 1.3 V; IDS = 0.2 mA  
IGS = 0.2 mA  
45  
60  
120  
80  
75  
mA  
mA  
mS  
µA  
V
1
10  
1.3  
0.7  
12.0  
14.5  
1.0  
14.0  
16.0  
280  
|VBDGS  
|VBDGD  
|
|
V
V
IGD = 0.2 mA  
V
DS > 3V  
θJC  
°C/W  
Phone: +1 408 850-5790  
Fax: +1 408 850-5766  
http://www.filtronic.co.uk/semis  
Revised: 11/17/04  
Email: sales@filcsi.com  
12

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