Datasheet > FPD7612_1

FPD7612_1

更新时间： 2024-09-28 03:37:31

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
4页	229K
描述
GENERAL PURPOSE PHEMT

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数据手册

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FPD7612_1 数据手册

FPD7612

Datasheet v3.0

GENERAL PURPOSE PHEMT

FEATURES:

LAYOUT:

•

20.5 dBm Output Power (P1dB)

13 dB Power Gain at 12 GHz

17 dB Maximum Stable Gain at 12 GHz

11 dB Maximum Stable Gain at 18 GHz

45% Power-Added Efficiency

GENERAL DESCRIPTION:

The

FPD7612

Electron

AlGaAs/InGaAs

Mobility

pseudomorphic

High

TYPICAL APPLICATIONS:

Transistor (PHEMT), featuring a 0.25 µm by

200 µm Schottky barrier gate, defined by high

-resolution stepper-based photolithography.

The recessed gate structure minimizes

•

Narrowband and broadband high-

performance amplifiers

•

SATCOM uplink transmitters

PCS/Cellular low-voltage high-efficiency

output amplifiers

parasitics to optimize performance.

The

epitaxial structure and processing have been

optimized for reliable high-power applications.

•

Medium-haul digital radio transmitters

ELECTRICAL SPECIFICATIONS :

PARAMETER

Power at 1dB Gain Compression

Power Gain at P1dB

SYMBOL

P1dB

CONDITIONS

MIN TYP

MAX

UNITS

dBm

VDS = 5 V; IDS = 50% IDSS

20.5

13.0

G1dB

11.0

Noise FIgure

N.F. min

PAE

VDS = 5 V; IDS = 50% IDSS

1.2

Power-Added Efficiency

VDS = 5V; IDS = 50% IDSS;

POUT = P1dB

Maximum Stable Gain (S21/S12)

f = 12 GHz

MSG

VDS = 5 V; IDS = 50% IDSS

f = 24 GHz

9.5

Saturated Drain-Source Current

Maximum Drain-Source Current

IDSS

IMAX

VDS = 1.3 V; VGS = 0 V

120

VDS = 1.3 V; VGS ≅ +1 V

Transconductance

IGSO

|VP|

VDS = 1.3 V; VGS = 0 V

VGS = -5 V

Gate-Source Leakage Current

Pinch-Off Voltage

µA

VDS = 1.3 V; IDS = 0.2 mA

IGS = 0.2 mA

0.7

1.0

14.0

16.0

280

1.3

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistivity (see Notes)

|VBDGS|

|VBDGD|

θJC

12.0

14.5

IGD = 0.2 mA

VDS > 3V

°C/W

VDS > 6V

θJC

Note:¹T_Ambient= 22°C; RF specifications measured at f = 12 GHz using CW signal

Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

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