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FPD750SOT343_1

更新时间： 2024-01-03 03:41:43
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FILTRONIC /
页数 文件大小 规格书
11页 684K
描述
LOW NOISE HIGH LINEARITY PACKAGED PHEMT

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FPD750SOT343_1 数据手册

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FPD750SOT343  
Datasheet v3.0  
LOW NOISE HIGH LINEARITY PACKAGED PHEMT  
PACKAGE:  
ROHS:  
FEATURES (1850MHZ):  
•
•
•
•
•
0.5 dB N.F.min.  
9
20 dBm Output Power (P1dB)  
16.5 dB Small-Signal Gain (SSG)  
37 dBm Output IP3  
RoHS compliant (Directive 2002/95/EC)  
GENERAL DESCRIPTION:  
The FPD750SOT343 is a packaged depletion  
mode pseudomorphic High Electron Mobility  
Transistor (pHEMT). It utilizes a 0.25 µm x 750  
µm Schottky barrier Gate. The Filtronic  
0.25µm process ensures class-leading noise  
TYPICAL APPLICATIONS:  
•
•
•
802.11a,b,g and WiMax LNAs  
performance.  
The use of a small footprint  
PCS/Cellular High Linearity LNAs  
Other types of wireless infrastructure systems.  
plastic package allows for cost effective  
system implementation.  
1
TYPICAL PERFORMANCE :  
RF PARAMETER  
Power at 1dB Gain Compression  
Small Signal Gain  
SYMBOL  
OP1dB  
CONDITIONS  
0.9GHZ 1.85GHZ 2.6GHZ 3.5GHZ UNITS  
VDS = 3.3 V; IDS = 40mA  
VDS = 3.3 V; IDS = 40mA  
20  
22  
19  
20  
14  
20.5  
11  
dBm  
dB  
SSG  
16.5  
Power-Added Efficiency  
PAE  
VDS = 3.3 V; IDS = 40mA  
POUT = P1dB  
50  
45  
45  
50  
%
Maximum Stable Gain (|S21/S12|)  
Noise Figure  
MSG  
N.F.  
VDS = 3.3 V; IDS = 40mA  
VDS = 3.3 V; IDS = 40mA  
24  
20  
18  
16  
dB  
dB  
0.5  
0.6  
0.7  
0.8  
Output Third-Order Intercept Point  
POUT = 9 dBm per Tone  
OIP3  
VDS = 3.3V; IDS = 40mA  
VDS = 3.3V; IDS = 80mA  
32  
35  
31  
37  
31  
35  
32  
38  
dBm  
2
ELECTRICAL SPECIFICATIONS :  
RF/DC PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
GHz  
dBm  
dB  
Frequency  
f
2.0  
Power at 1dB Gain Compression  
Small Signal Gain  
P1dB  
SSG  
VDS = 3.3 V; IDS = 40mA  
VDS = 3.3 V; IDS = 40mA  
VDS = 1.3 V; VGS = 0 V  
VDS = 1.3 V; VGS = 0 V  
VDS = 1.3 V; IDS = 0.75 mA  
IGS = 0.75 mA  
17  
16  
Saturated Drain-Source Current  
Transconductance  
IDSS  
185  
230  
200  
1.0  
16  
280  
1.3  
mA  
GM  
mS  
Pinch-Off Voltage  
|VP|  
0.7  
13  
13  
V
Gate-Source Breakdown Voltage  
Gate-Drain Breakdown Voltage  
Thermal Resistivity (see Notes)  
|VBDGS|  
|VBDGD|  
θJC  
V
IGD = 0.75 mA  
18  
V
VDS > 3V  
143  
°C/W  
Note: 1. Based on measured data taken on applications circuits. 2. All devices are 100% RF and DC tested at  
2GHz with ZS = ZL = 50 Ohms 3. TAMBIENT = 22°C  
1
Specifications subject to change without notice  
Filtronic Compound Semiconductors Ltd  
Tel: +44 (0) 1325 301111  
Fax: +44 (0) 1325 306177  
Email: sales@filcs.com  
Website: www.filtronic.com  
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