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FPD750-000SQ PDF预览

FPD750-000SQ

更新时间： 2024-09-27 06:59:59
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威讯 - RFMD 晶体晶体管放大器
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4页 237K
描述
0.5W POWER pHEMT

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FPD750-000SQ 数据手册

 浏览型号FPD750-000SQ的Datasheet PDF文件第2页浏览型号FPD750-000SQ的Datasheet PDF文件第3页浏览型号FPD750-000SQ的Datasheet PDF文件第4页 
FPD7500.5W  
Power pHEMT  
FPD750  
0.5W POWER pHEMT  
Package Style: Bare Die  
Product Description  
Features  
The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor  
(pHEMT), featuring a 0.25μmx750μm Schottky barrier gate, defined by high -reso-  
lution stepper-based photolithography. The double recessed gate structure mini-  
mizes parasitics to optimize performance. The epitaxial structure and processing  
have been optimized for reliable high-power applications. The FPD750 also fea-  
tures Si3N4 passivation and is available in the low-cost plastic SOT89, SOT343, and  
„
27.5dBm Linear Output  
Power at 12GHz  
„
„
11.5dB Power Gain at 12GHz  
14.5dB Max Stable Gain at  
12GHz  
DFN packages.  
„
„
38dBm O  
IP3  
50% Power-Added Efficiency  
Optimum Technology  
Matching® Applied  
Applications  
GaAs HBT  
GaAs MESFET  
InGaP HBT  
SiGe BiCMOS  
Si BiCMOS  
SiGe HBT  
„
Narrowband and Broadband  
High-Performance Amplifiers  
„
„
SATCOM Uplink Transmitters  
PCS/Cellular Low-Voltage  
High-Efficiency Output Ampli-  
fiers  
GaAs pHEMT  
9
Si CMOS  
Si BJT  
„
Medium-Haul Digital Radio  
Transmitters  
GaN HEMT  
InP HBT  
RF MEMS  
LDMOS  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
Max.  
Electrical Specifications  
P
Gain Compression  
26.5  
13.5  
10.5  
27.5  
14.5  
11.5  
45  
dBm  
dB  
V
V
V
V
V
=8V, I =50% I  
DS  
1dB  
DS  
DS  
DS  
DS  
DS  
DSS  
DSS  
DSS  
Maximum Stable Gain (S21/S12)  
Power Gain at P (G  
=8V, I =50% I  
DS  
)
dB  
=8V, I =50% I  
DS  
1dB 1dB  
Power-Added Efficiency (PAE)  
OIP  
%
=8V, I =50% I , P =P  
DS  
DSS  
OUT  
1dB  
38  
dBm  
dBm  
mA  
mA  
=8V, I =50% I  
DS  
3
DSS  
40  
Matched for optimal power, tuned for best IP  
3
Saturated Drain-Source Current (I  
Maximum Drain-Source Current  
)
185  
230  
370  
280  
V
V
=1.3V, V =0V  
DSS  
DS  
DS  
GS  
=1.3V, V ≈+1V  
GS  
(I  
)
MAX  
Transconductance (G )  
200  
10  
ms  
μA  
V
V
=1.3V, V =0 V  
DS GS  
M
Gate-Source Leakage Current (I  
)
VGS=-5V  
V =1.3V, I =0.36mA  
DS  
GSO  
Pinch-Off Voltage (V )  
|1.0|  
|14.0|  
P
DS  
Gate-Source Breakdown Voltage  
(V  
|12.0|  
|14.5|  
V
I
=0.75mA  
=0.75mA  
>6V  
GS  
)
BDGS  
Gate-Drain Breakdown Voltage  
(V  
|16.0|  
V
I
GD  
)
BDGD  
Thermal Resistivity (θJC)  
Note: T  
65  
°C/W  
V
DS  
=22°C, RF specifications measured at f=12GHz using CW signal.  
AMBIENT  
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-  
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
Rev A1 DS090609  
1 of 4  
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