FPD750

更新时间： 2024-09-26 22:32:03

品牌	Logo	应用领域
FILTRONIC		晶体晶体管
页数	文件大小	规格书
2页	176K
描述
0.5W POWER PHEMT

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中文翻译

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技术参数
数据手册

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FPD750 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Is Samacsys：	N	Base Number Matches：	1

FPD750 数据手册

FPD750

0.5W POWER PHEMT

DRAIN

BOND

• FEATURES

PAD (2X)

♦ 27 dBm Linear Output Power at 12 GHz

♦ 11.5 dB Power Gain at 12 GHz

♦ 14.5 dB Maximum Stable Gain at 12 GHz

♦ 38 dBm Output IP3

SOURCE

BOND

PAD (2x)

GATE

BOND

♦ 50% Power-Added Efficiency

PAD (2X)

DIE SIZE (µm): 340 x 470

DIE THICKNESS: 75 µm

BONDING PADS (µm): >60 x 60

• DESCRIPTION AND APPLICATIONS

The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),

featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepper-based

photolithography. The recessed and offset Gate structure minimizes parasitics to optimize

performance. The epitaxial structure and processing have been optimized for reliable high-power

applications. The FPD750 also features Si₃N₄passivation and is available in a P100 flanged ceramic

package and in the low cost plastic SOT89 and SOT343 plastic packages.

Typical applications include commercial and other narrowband and broadband high-performance

amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output

amplifiers, and medium-haul digital radio transmitters.

• ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max Units

RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL

Power at 1dB Gain Compression

Maximum Stable Gain (S₂₁/S₁₂)

Power Gain at P_1dB

P_1dB

SSG

G_1dB

PAE

V_DS= 8 V; I_DS= 50% I_DSS

26.5

13.5

10.5

27.0

14.5

11.5

dBm

Power-Added Efficiency

_DS= 8 V; I_DS= 50% I_DSS

;

_OUT= P_1dB

Output Third-Order Intercept Point

IP3

V_DS= 10V; I_DS= 50% I_DSS

Matched for optimal power

Tuned for best IP3

(from 15 to 5 dB below P_1dB

)

dBm

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistivity (see Notes)

I_DSS

I_MAX

G_M

I_GSO

|V_P|

V_DS= 1.3 V; V_GS= 0 V

V_DS= 1.3 V; V_GS≅ +1 V

V_DS= 1.3 V; V_GS= 0 V

V_GS= -5 V

V_DS= 1.3 V; I_DS= 0.75 mA

I_GS= 0.75 mA

185

230

370

200

280

µA

1.0

|V_BDGS

|V_BDGD

12.0

14.5

14.0

16.0

I_GD= 0.75 mA

_DS> 6V

θ_JC

°C/W

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Revised: 11/17/04

Email: sales@filcsi.com

中文翻译

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与FPD750相关器件

型号	品牌	获取价格	描述	数据表
FPD750_1	FILTRONIC	获取价格	0.5W POWER PHEMT
FPD750-000	RFMD	获取价格	0.5W POWER pHEMT
FPD750-000S3	RFMD	获取价格	0.5W POWER pHEMT
FPD750-000SQ	RFMD	获取价格	0.5W POWER pHEMT
FPD750DFN	FILTRONIC	获取价格	LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
FPD750DFN_1	FILTRONIC	获取价格	LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FPD750P100	FILTRONIC	获取价格	0.5W PACKAGED POWER PHEMT
FPD750SOT343	FILTRONIC	获取价格	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
FPD750SOT343_1	FILTRONIC	获取价格	LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FPD750SOT343CE	FILTRONIC	获取价格	LOW NOISE HIGH LINEARITY PACKAGED PHEMT

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