FPD7500.5W
Power pHEMT
FPD750
0.5W POWER pHEMT
Package Style: Bare Die
Product Description
Features
The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor
(pHEMT), featuring a 0.25μmx750μm Schottky barrier gate, defined by high -reso-
lution stepper-based photolithography. The double recessed gate structure mini-
mizes parasitics to optimize performance. The epitaxial structure and processing
have been optimized for reliable high-power applications. The FPD750 also fea-
tures Si3N4 passivation and is available in the low-cost plastic SOT89, SOT343, and
27.5dBm Linear Output
Power at 12GHz
11.5dB Power Gain at 12GHz
14.5dB Max Stable Gain at
12GHz
DFN packages.
38dBm O
IP3
50% Power-Added Efficiency
Optimum Technology
Matching® Applied
Applications
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
GaAs pHEMT
9
Si CMOS
Si BJT
Medium-Haul Digital Radio
Transmitters
GaN HEMT
InP HBT
RF MEMS
LDMOS
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
Electrical Specifications
P
Gain Compression
26.5
13.5
10.5
27.5
14.5
11.5
45
dBm
dB
V
V
V
V
V
=8V, I =50% I
DS
1dB
DS
DS
DS
DS
DS
DSS
DSS
DSS
Maximum Stable Gain (S21/S12)
Power Gain at P (G
=8V, I =50% I
DS
)
dB
=8V, I =50% I
DS
1dB 1dB
Power-Added Efficiency (PAE)
OIP
%
=8V, I =50% I , P =P
DS
DSS
OUT
1dB
38
dBm
dBm
mA
mA
=8V, I =50% I
DS
3
DSS
40
Matched for optimal power, tuned for best IP
3
Saturated Drain-Source Current (I
Maximum Drain-Source Current
)
185
230
370
280
V
V
=1.3V, V =0V
DSS
DS
DS
GS
=1.3V, V ≈+1V
GS
(I
)
MAX
Transconductance (G )
200
10
ms
μA
V
V
=1.3V, V =0 V
DS GS
M
Gate-Source Leakage Current (I
)
VGS=-5V
V =1.3V, I =0.36mA
DS
GSO
Pinch-Off Voltage (V )
|1.0|
|14.0|
P
DS
Gate-Source Breakdown Voltage
(V
|12.0|
|14.5|
V
I
=0.75mA
=0.75mA
>6V
GS
)
BDGS
Gate-Drain Breakdown Voltage
(V
|16.0|
V
I
GD
)
BDGD
Thermal Resistivity (θJC)
Note: T
65
°C/W
V
DS
=22°C, RF specifications measured at f=12GHz using CW signal.
AMBIENT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A1 DS090609
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