Datasheet > FPD750DFN_1

FPD750DFN_1

更新时间： 2024-09-27 03:37:31

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
9页	499K
描述
LOW NOISE HIGH LINEARITY PACKAGED PHEMT

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FPD750DFN_1 数据手册

FPD750DFN

Datasheet v3.0

LOW NOISE HIGH LINEARITY PACKAGED PHEMT

PACKAGE:

RoHS

FEATURES (1850MHZ):

•

24 dBm Output Power (P1dB)

20 dB Small-Signal Gain (SSG)

0.3 dB Noise Figure

39 dBm Output IP3 at 50% Bias

45% Power-Added Efficiency

RoHS compliant

GENERAL DESCRIPTION:

TYPICAL APPLICATIONS:

The FPD750DFN is a packaged depletion

mode AlGaAs/InGaAs pseudomorphic High

Electron Mobility Transistor (pHEMT). It

utilizes a 0.25 µm x 750 µm Schottky barrier

Gate, defined by high-resolution stepper-

based photolithography. The recessed and

offset Gate structure minimizes parasitics to

optimize performance, with an epitaxial

structure designed for improved linearity over

a range of bias conditions and input power

levels.

•

Drivers or output stages in PCS/Cellular

base station transmitter amplifiers

High intercept-point LNAs

WLL and WLAN systems, and other types

of wireless infrastructure systems.

•

ELECTRICAL SPECIFICATIONS:

PARAMETER

Power at 1dB Gain Compression

Small-Signal Gain

SYMBOL

CONDITIONS

MIN

22.5

TYP

MAX

UNITS

dBm

P1dB

VDS = 5 V; IDS = 50% IDSS

SSG

Power-Added Efficiency

Noise Figure

PAE

VDS = 5 V; IDS = 50% IDSS;

POUT = P1dB

VDS = 5 V; IDS = 50% IDSS

VDS = 5 V; IDS = 25% IDSS

0.7

0.3

1.1

0.9

Output Third-Order Intercept Point

(from 15 to 5 dB below P1dB)

IP3

VDS = 5V; IDS = 50% IDSS

Matched for optimal power

Matched for best IP3

dBm

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

IDSS

IMAX

VDS = 1.3 V; VGS = 0 V

180

230

375

200

280

VDS = 1.3 V; VGS ≅ +1 V

VDS = 1.3 V; VGS = 0 V

VGS = -5 V

Gate-Source Leakage Current

Pinch-Off Voltage

IGSO

µA

|VP|

VDS = 1.3 V; IDS = 0.75 mA

IGS = 0.75mA

0.7

1.0

1.3

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

|VBDGS|

|VBDGD|

IGD = 0.75 mA

Note: T_AMBIENT= 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)

Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

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