Datasheet > FPD750_1

FPD750_1

更新时间： 2024-01-03 00:54:33

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FILTRONIC		/
页数	文件大小	规格书
3页	177K
描述
0.5W POWER PHEMT

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FPD750_1 数据手册

FPD750

Datasheet v3.0

0.5W POWER PHEMT

FEATURES:

LAYOUT:

•

27.5 dBm Linear Output Power at 12 GHz

11.5 dB Power Gain at 12 GHz

14.5 dB Max Stable Gain at 12 GHz

38 dBm Output IP3

50% Power-Added Efficiency

GENERAL DESCRIPTION:

The

FPD750

AlGaAs/InGaAs

Mobility

TYPICAL APPLICATIONS:

pseudomorphic

High

Electron

Transistor (PHEMT), featuring a 0.25 µm by

750 µm Schottky barrier gate, defined by high-

resolution stepper-based photolithography.

The double recessed gate structure minimizes

•

Narrowband and broadband high-

performance amplifiers

•

SATCOM uplink transmitters

PCS/Cellular low-voltage high-efficiency

output amplifiers

parasitics to optimize performance.

The

epitaxial structure and processing have been

optimized for reliable high-power applications.

The FPD750 also features Si₃N₄passivation

and is available in the low cost plastic SOT89

SOT343 and DFN packages.

•

Medium-haul digital radio transmitters

ELECTRICAL SPECIFICATIONS :

PARAMETER

SYMBOL

CONDITIONS

MIN TYP

MAX

UNITS

dBm

Power at 1dB Gain Compression

Maximum Stable Gain (S21/S12)

P1dB

VDS = 8 V; IDS = 50% IDSS

26.5

13.5

10.5

27.5

14.5

MSG

Power Gain at P1dB

G1dB

PAE

VDS = 8 V; IDS = 50% IDSS

11.5

Power-Added Efficiency

VDS = 8 V; IDS = 50% IDSS; POUT = P1dB

Output Third-Order Intercept Point

(from 15 to 5 dB below P1dB)

VDS = 8V; IDS = 50% IDSS

IP3

Matched for optimal power; Tuned for best IP3

dBm

Saturated Drain-Source Current

IDSS

VDS = 1.3 V; VGS = 0 V

185

230

280

Maximum Drain-Source Current

Transconductance

IMAX

370

200

µA

VDS = 1.3 V; VGS ≅ +1 V

VDS = 1.3 V; VGS = 0 V

VGS = -5 V

Gate-Source Leakage Current

Pinch-Off Voltage

IGSO

|VP|

VDS = 1.3 V; IDS = 0.75 mA

IGS = 0.75 mA

1.0

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistivity (see Notes)

|VBDGS|

|VBDGD|

θ_JC

12.0

14.5

14.0

16.0

IGD = 0.75 mA

VDS > 6V

°C/W

Note: ¹T_Ambient= 22°C; RF specifications measured at f = 12 GHz using CW signal

Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

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