Datasheet > FPD6836P70_1

FPD6836P70_1

更新时间： 2024-09-27 03:06:31

品牌	Logo	应用领域
FILTRONIC		/
页数	文件大小	规格书
9页	340K
描述
LOW NOISE HIGH FREQUENCY PACKAGED PHEMT

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FPD6836P70_1 数据手册

FPD6836P70

Datasheet v3.0

LOW NOISE HIGH FREQUENCY PACKAGED PHEMT

PACKAGE:

FEATURES:

•

22 dBm Output Power (P1dB)

15 dB Power Gain (G1dB) at 5.8 GHz

0.8 dB Noise Figure at 5.8 GHz

32 dBm Output IP3 at 5.8 GHz

45% Power-Added Efficiency at 5.8 GHz

Useable Gain to 18 GHz

GENERAL DESCRIPTION:

The FPD6836P70 is a low parasitic, surface

TYPICAL APPLICATIONS:

mountable

pseudomorphic

packaged

High

depletion

Electron

mode

Mobility

•

Gain blocks and medium power stages

WiMax (2-11GHz)

WLAN 802.11a (5.8GHz)

Transistor (pHEMT) optimised for low noise,

high frequency applications.

Point-to-Point Radio (to 18GHz)

ELECTRICAL SPECIFICATIONS:

PARAMETER

Power at 1dB Gain Compression

Small Signal Gain

SYMBOL

CONDITIONS

VDS = 5 V; IDS = 55mA

MIN

TYP

MAX

UNITS

dBm

P1dB

SSG

Power-Added Efficiency

PAE

VDS = 5 V; IDS = 55mA

POUT = P1dB

Maximum Stable Gain (S21/S12)

f = 12 GHz

MSG

VDS = 5 V; IDS = 55mA

f = 18 GHz

Noise Figure

VDS = 5 V; IDS = 55mA,

0.8

Output Third-Order Intercept Point

IP3

VDS = 5V; IDS = 55mA

POUT = 10 dBm SCL

dBm

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

IDSS

IMAX

VDS = 1.3 V; VGS = 0 V

105

215

140

135

VDS = 1.3 V; VGS ≅ +1 V

VDS = 1.3 V; VGS = 0 V

VGS = -5 V

Gate-Source Leakage Current

Pinch-Off Voltage

IGSO

µA

|VP|

VDS = 1.3 V; IDS = 0.2 mA

IGS = 0.36mA

0.7

1.0

1.3

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistance

|VBDGS|

|VBDGD|

RθJC

IGD = 0.36 mA

14.5

275

°C/W

Note: T_AMBIENT= 22°C; RF specification measured at f = 5.8 GHz using CW signal (except as noted)

Specifications subject to change without notice

Filtronic Compound Semiconductors Ltd

Tel: +44 (0) 1325 301111

Fax: +44 (0) 1325 306177

Email: sales@filcs.com

Website: www.filtronic.com

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