Datasheet > FPD6836

FPD6836

更新时间： 2024-09-26 22:32:03

品牌	Logo	应用领域
FILTRONIC		晶体晶体管放大器
页数	文件大小	规格书
2页	189K
描述
0.25W POWER PHEMT

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技术参数
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FPD6836 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

FPD6836 数据手册

FPD6836

0.25W POWER PHEMT

• FEATURES

DRAIN

BOND

GATE

BOND

♦ 25.5 dBm Linear Output Power at 12 GHz

♦ 10 dB Power Gain at 12 GHz

♦ 16.5 dB Maximum Stable Gain at 12 GHz

♦ 12 dB Maximum Stable Gain at 24 GHz

♦ 50% Power-Added Efficiency

♦ 8V Operation

PAD (1X)

SOURCE

BOND

PAD (2x)

DIE SIZE (µm): 400 x 400 µm

DIE THICKNESS: 75 µm

BONDING PADS (

µm): >75 x 70

• DESCRIPTION AND APPLICATIONS

The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),

featuring a 0.25 µm by 360 µm Schottky barrier gate, defined by high-resolution stepper-based

photolithography. The recessed and offset Gate structure minimizes parasitics to optimize

performance. The epitaxial structure and processing have been optimized for reliable medium-

power applications. The FPD6836 also features Si₃N₄passivation and is available in a low cost

plastic package.

Typical applications include commercial and other narrowband and broadband high-performance

amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output

amplifiers, and medium-haul digital radio transmitters.

• ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max Units

RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL

Power at 1dB Gain Compression

Power Gain at P_1dB

P_1dB

G_1dB

PAE

V_DS= 8 V; I_DS= 50% I_DSS

24.5

9.0

25.5

10.0

dBm

Power-Added Efficiency

_DS= 8 V; I_DS= 50% I_DSS

_OUT= P_1dB

Maximum Stable Gain (S₂₁/S₁₂)

f = 12 GHz

SSG

_DS= 8 V; I_DS= 50% I_DSS

15.5

11.0

16.5

12.0

f = 24 GHz

Saturated Drain-Source Current

Maximum Drain-Source Current

Transconductance

Gate-Source Leakage Current

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Gate-Drain Breakdown Voltage

Thermal Resistivity (see Notes)

I_DSS

I_MAX

G_M

I_GSO

|V_P|

V_DS= 1.3 V; V_GS= 0 V

V_DS= 1.3 V; V_GS≅ +1 V

V_DS= 1.3 V; V_GS= 0 V

V_GS= -5 V

V_DS= 1.3 V; I_DS= 0.36 mA

I_GS= 0.36 mA

110

215

140

135

µA

1.3

0.7

12.0

14.5

1.0

|V_BDGS

|V_BDGD

14.0

16.0

125

I_GD= 0.36 mA

_DS> 3V

θ_JC

°C/W

Phone: +1 408 850-5790

Fax: +1 408 850-5766

http://www.filtronic.co.uk/semis

Revised: 11/17/04

Email: sales@filcsi.com

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