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FPD6836_1 PDF预览

FPD6836_1

更新时间: 2024-01-27 23:19:39
品牌 Logo 应用领域
FILTRONIC /
页数 文件大小 规格书
3页 173K
描述
0.25W POWER PHEMT

FPD6836_1 数据手册

 浏览型号FPD6836_1的Datasheet PDF文件第2页浏览型号FPD6836_1的Datasheet PDF文件第3页 
FPD6836  
Datasheet v3.0  
0.25W POWER PHEMT  
FEATURES:  
LAYOUT:  
25.5 dBm Output Power (P1dB)  
10 dB Power Gain at 12 GHz  
16.5 dB Max Stable Gain at 12 GHz  
12 dB Maximum Stable Gain at 24 GHz  
50% Power-Added Efficiency  
8V Operation  
GENERAL DESCRIPTION:  
The  
FPD6836  
is  
an  
Electron  
AlGaAs/InGaAs  
Mobility  
pseudomorphic  
High  
Transistor (PHEMT), featuring a 0.25 µm by  
360 µm Schottky barrier gate, defined by high  
-resolution stepper-based photolithography.  
The recessed gate structure minimizes  
TYPICAL APPLICATIONS:  
Narrowband and broadband high-  
performance amplifiers  
parasitics to optimize performance.  
The  
SATCOM uplink transmitters  
PCS/Cellular low-voltage high-efficiency  
output amplifiers  
epitaxial structure and processing have been  
optimized for reliable high-power applications.  
Medium-haul digital radio transmitters  
1
ELECTRICAL SPECIFICATIONS :  
PARAMETER  
Power at 1dB Gain Compression  
Power Gain at P1dB  
SYMBOL  
P1dB  
CONDITIONS  
MIN TYP  
MAX  
UNITS  
dBm  
VDS = 8 V; IDS = 50% IDSS  
VDS = 8 V; IDS = 50% IDSS  
24.5  
9.0  
25.5  
10.0  
G1dB  
dB  
Power-Added Efficiency  
PAE  
VDS = 8 V; IDS = 50% IDSS  
POUT = P1dB  
50  
%
Maximum Stable Gain (S21/S12)  
f = 12 GHz  
MSG  
VDS = 8 V; IDS = 50% IDSS  
15.5  
11.0  
16.5  
12.0  
dB  
f = 24 GHz  
Saturated Drain-Source Current  
Maximum Drain-Source Current  
IDSS  
IMAX  
VDS = 1.3 V; VGS = 0 V  
90  
110  
215  
135  
mA  
mA  
VDS = 1.3 V; VGS +1 V  
Transconductance  
Gate-Source Leakage Current  
Pinch-Off Voltage  
GM  
IGSO  
VDS = 1.3 V; VGS = 0 V  
VGS = -5 V  
140  
1
mS  
10  
µA  
V
|VP|  
VDS = 1.3 V; IDS = 0.36 mA  
IGS = 0.36 mA  
0.7  
1.0  
1.3  
Gate-Source Breakdown Voltage  
Gate-Drain Breakdown Voltage  
Thermal Resistivity (see Notes)  
|VBDGS|  
|VBDGD|  
θJC  
12.0  
14.5  
14.0  
16.0  
125  
V
IGD = 0.36 mA  
V
VDS > 3V  
°C/W  
Note:1 TAmbient = 22°C; RF specifications measured at f = 12 GHz using CW signal  
1
Specifications subject to change without notice  
Filtronic Compound Semiconductors Ltd  
Tel: +44 (0) 1325 301111  
Fax: +44 (0) 1325 306177  
Email: sales@filcs.com  
Website: www.filtronic.com  

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