Datasheet > FLL1500IU-2C

FLL1500IU-2C

更新时间： 2024-11-20 22:40:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	155K
描述
L-Band High Power GaAs FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FLL1500IU-2C 数据手册

FLL1500IU-2C

L-Band High Power GaAs FET

FEATURES

• Push-Pull Configuration

• High Power Output: 150W (Typ.)

• High PAE: 48% (Typ.)

• Broad Frequency Range: 2100 to 2200 MHz.

• Suitable for class AB operation.

DESCRIPTION

The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that

offers ease of matching, greater consistency and a broader bandwidth for high

power L-band amplifiers. This product is targeted to reduce the size and

complexity of highly linear, high power base station transmitting amplifiers.

This new product is well suited for use in W-CDMA and IMT 2000 base station

amplifiers as it offers high gain, long term reliability and ease of use.

APPLICATIONS

• Solid State Base-Station Power Amplifier.

• W-CDMA and IMT 2000 Communication Systems.

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

Item

Symbol

Condition

Rating

Unit

-5

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Tc = 25°C

187.5

°C

stg

-65 to +175

+175

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (V ) should not exceed 12 volts.

2. The forward and reverse gate currents should not exceed 353 and -103.6 mA respectively with

gate resistance of 10Ω.

3. The operating channel temperature (T ) should not exceed 145°C.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Limits

Typ.

Item

Symbol

Conditions

Unit

Min.

Max.

= 5V, V = 0V

Drain Current

DSS

Pinch-Off Voltage

= 5V, I = 440mA -0.1

-0.3 -0.5

= -4.4mA

Gate-Source Breakdown Voltage

-5

dBm

GSO

Output Power

Linear Gain

50.8 51.8

out

= 12V

11.0

12.0

f = 2.17 GHz

= 4.0A

Drain Current

DSR

Pin = 43.0dBm

Power-Added Efficiency

Thermal Resistance

CASE STYLE: IU

add

Channel to Case

0.55

0.8

°C/W

Edition 1.1

October 2004

12 3 4

中文翻译

下载PDF

与FLL1500IU-2C相关器件

型号	品牌	获取价格	描述	数据表
FLL171ME	FUJITSU	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, J
FLL177	FUJITSU	获取价格	L-BAND MEDIUM & HIGH POWER GAAS FET
FLL177ME	FUJITSU	获取价格	L-BAND MEDIUM & HIGH POWER GAAS FET
FLL200IB-1	EUDYNA	获取价格	L-Band Medium & High Power GaAs FET
FLL200IB-2	EUDYNA	获取价格	L-Band Medium & High Power GaAs FET
FLL200IB-3	EUDYNA	获取价格	L-Band Medium & High Power GaAs FET
FLL21E004ME	EUDYNA	获取价格	High Voltage - High Power GaAs FET
FLL21E010MK	EUDYNA	获取价格	High Voltage - High Power GaAs FET
FLL21E040IK	EUDYNA	获取价格	High Voltage - High Power GaAs FET
FLL21E045IY	EUDYNA	获取价格	L,S-band High Power GaAs FET