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FLL400IK-2 PDF预览

FLL400IK-2

更新时间: 2024-01-20 17:39:53
品牌 Logo 应用领域
EUDYNA /
页数 文件大小 规格书
3页 61K
描述
High Voltage - High Power GaAs FET

FLL400IK-2 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.4
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:15 V
FET 技术:JUNCTION最高频带:S BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE

FLL400IK-2 数据手册

 浏览型号FLL400IK-2的Datasheet PDF文件第2页浏览型号FLL400IK-2的Datasheet PDF文件第3页 
FLL400IK-2  
High Voltage - High Power GaAs FET  
FEATURES  
High Output Power: P1dB=46.5dBm(Typ.)  
High Gain: G1dB=12.0dB(Typ.)  
High PAE: hadd=46%(Typ.)  
Broad Band: 1.8~2.0GHz  
Hermetically Sealed Package  
DESCRIPTION  
The FLL400IK-2 is a 40 Watt GaAs FET that is specially suited  
for use in PHS base station amplifier as long term reliability.  
Fujitsu’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25oC)  
Item  
Symbol  
VDS  
GS  
V
PTot  
Unit  
Rating  
15  
-5  
93.7  
-65 to +175  
175  
Drain-Source Voltage  
Gate-Source Voltage  
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
V
V
W
oC  
oC  
stg  
T
ch  
T
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC)  
Item  
Symbol  
Condition  
Unit  
Limit  
12  
<54.4  
>-17.4  
DC Input Voltage  
Forward Gate Current  
Reverse Gate Current  
VDS  
IGF  
IGR  
V
W
RG=10  
mA  
mA  
oC  
RG=10W  
Operating channel temperature  
Tch  
145  
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)  
Limit  
Item  
Symbol  
Condition  
Unit  
Min. Typ. Max.  
VDS=5V,IDS=8.0A  
VDS=5V,IDS=1.08A  
IGS=-1.08mA  
Transconductance  
gm  
Vp  
-
9.0  
-
S
V
V
Pinch-off Voltage  
Gate-Source Breakdown Voltage  
-1.0  
-5.0  
-2.0 -3.5  
VGSO  
-
-
Output Power at 1dB G.C.P.  
Power Gain at 1dB G.C.P.  
Drain Current  
P1dB  
G1dB  
Idsr  
45.5 46.5  
11.5 12.0  
-
-
dBm  
dB  
A
VDD=12V  
f=1.9GHz  
IDS(DC)=4A  
-
-
-
7.5  
46.0  
1.3  
8.5  
-
h
Power-added Efficiency  
Thermal Resistance  
add  
%
Rth  
1.6  
oC/W  
CASE STYLE: IK  
ESD  
Class III  
2000 V~  
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kW)  
Edition 1.1  
Augest 2004  
1

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