Datasheet > FLL400IP-3

FLL400IP-3

更新时间： 2024-11-14 10:34:23

品牌	Logo	应用领域
其他 - ETC		/
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描述
L-Band Medium & High Power GaAs FET

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FLL400IP-3 数据手册

FLL400IP-3

L-Band Medium & High Power GaAs FET

FEATURES

• Push-Pull Configuration

• High Power Output: 35W (Typ.)

• High PAE: 43% (Typ.)

• Broad Frequency Range: 2300 to 2500 MHz.

• Suitable for class A operation at 10V

and class AB operation at 12V

DESCRIPTION

The FLL400IP-3 is a 35 Watt GaAs FET that employs a push-pull design that

offers ease of matching, greater consistency and a broader bandwidth for high

power S-band amplifiers. This product is targeted to reduce the size and

complexity of highly linear, high power base station transmitting amplifiers.

This new product is uniquely suited for use in Wireless Local Loop (WLL) base

station amplifiers as it offers high gain, long term reliability and ease of use.

Eudyna’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

Parameter

Symbol

Condition

Rating

Unit

-5

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

Tc = 25°C

107

°C

-65 to +175

+175

stg

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (V ) should not exceed 12 volts.

2. The forward and reverse gate currents should not exceed 54.4 and -17.4 mA respectively with

gate resistance of 25Ω.

3. The operating channel temperature (T ) should not exceed 145°C.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Limits

Typ.

Item

Drain Current

Symbol

Conditions

Unit

Min.

Max.

= 5V, V = 0V

DSS

= 5V, I

= 7.2A

Transconductance

Pinch-Off Voltage

6000

= 5V, I = 720mA -1.0

-2.0 -3.5

GSO

= -720µA

Gate-Source Breakdown Voltage

Output Power at 1 dB G.C.P.

Power Gain at 1 dB G.C.P.

Drain Current

-5

dBm

1dB

44.5 45.5

= 12V

8.0

9.0

6.0

1dB

f = 2.5 GHz

= 2A

8.0

DSR

Power-Added Efficiency

add

1dB

V = 10V

Output Power at 1 dB G.C.P.

44.5

dBm

f = 2.5 GHz

= 5A (Note 1)

Power Gain at 1 dB G.C.P.

Thermal Resistance

CASE STYLE: IP

9.0

1.0

1dB

Channel to Case

1.4

°C/W

G.C.P.: Gain Compression Point

Note 1: The device shall be measured at a constant V

condition.

Edition 1.5

October 2004

12 3 4

中文翻译

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与FLL400IP-3相关器件

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FLL410IK-3C	EUDYNA	获取价格	L-Band High Power GaAs FET
FLL410IK-4C	FUJITSU	获取价格	L-Band High Power GaAs FET
FLL55MK	FUJITSU	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction
FLL57MK	EUDYNA	获取价格	L-Band Medium & High Power GaAs FET
FLL600IQ-2	FUJITSU	获取价格	Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB ope
FLL600IQ-2C	EUDYNA	获取价格	L-Band High Power GaAs FET
FLL600IQ-3	EUDYNA	获取价格	L-Band Medium & High Power GaAs FET
FLL800IQ-2C	FUJITSU	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction
FLL810IQ-3C	EUDYNA	获取价格	L-Band High Power GaAs FET
FLL810IQ-4C	EUDYNA	获取价格	L-Band High Power GaAs FET

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