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FLLD261D87Z PDF预览

FLLD261D87Z

更新时间: 2024-11-14 19:32:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管
页数 文件大小 规格书
5页 51K
描述
Rectifier Diode, 2 Element, 0.25A, Silicon, TO-236AB

FLLD261D87Z 技术参数

生命周期:Obsolete包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.71
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.35 W
认证状态:Not Qualified最大反向恢复时间:0.4 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

FLLD261D87Z 数据手册

 浏览型号FLLD261D87Z的Datasheet PDF文件第2页浏览型号FLLD261D87Z的Datasheet PDF文件第3页浏览型号FLLD261D87Z的Datasheet PDF文件第4页浏览型号FLLD261D87Z的Datasheet PDF文件第5页 
FLLD261  
3
HIGH CONDUCTANCE LOW LEAKAGE DIODE  
PACKAGE  
TO-236AB (Low)  
PD . . . .350 mW @ TA = 25 Deg C  
BV . . . .200 V (MIN) @ IR = 5 uA  
P8A  
ABSOLUTE MAXIMUM RATINGS (NOTE 1)  
1
2
TEMPERATURES  
Storage Temperature  
Operating Junction Temperature  
-55 to +150 Degrees C  
-55 to +150 Degrees C  
CONNECTION DIAGRAMS  
3
POWER DISSIPATION (NOTES 2 & 3)  
Total Device Dissipation at TA = 25 Deg C  
Derating Factor per Degree C  
350 mW  
2.8 mW  
1
2
VOLTAGES & CURRENTS  
WIV  
IO  
IF  
Working Inverse Voltage  
Average Rectified Current  
DC Forward Current  
100 V  
250 mA  
600 mA  
700 mA  
if  
Recurrent Peak Forward Current  
if (surge) Peak Forward Surge Current  
Pulse width = 1 second  
1.0 A  
3.0 A  
Pulse width = 1 microsec  
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)  
SYM  
BV  
CHARACTERISTICS  
Breakdown Voltage  
MIN  
MAX UNITS  
TEST CONDITIONS  
200  
V
IR =  
5.0 uA  
IR  
Reverse Voltage Leakage Current  
5.0  
5.0  
nA  
uA  
VR = 100 V  
VR = 100 V  
TA = 150 Deg C  
f = 1.0 MHZ  
VF  
CT  
Forward Voltage  
1.40  
4.0  
V
IF = 200 mA  
VR = 1.0 V  
Diode Capacitance  
Reverse Recovery Time  
pF  
ns  
TRR  
400  
IF = IR = 50 to 400 mA  
IRR = 10% IR RL = 100 ohms  
TFR  
Forward Recovery Time  
Peak Forward Voltage  
10  
ns  
V
IF =  
10 mA  
10 mA  
VFM  
0.9  
IF =  
Typ  
Rise Time = 5 ns +/-20%  
NOTES:  
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  

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