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FLLD261 PDF预览

FLLD261

更新时间: 2024-11-13 22:29:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管光电二极管
页数 文件大小 规格书
5页 52K
描述
HIGH CONDUCTANCE LOW LEAKAGE DIODE

FLLD261 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:3.35
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:167329Samacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 3LSamacsys Released Date:2015-05-24 21:47:42
Is Samacsys:N配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.4 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:3 A
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.4 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FLLD261 数据手册

 浏览型号FLLD261的Datasheet PDF文件第2页浏览型号FLLD261的Datasheet PDF文件第3页浏览型号FLLD261的Datasheet PDF文件第4页浏览型号FLLD261的Datasheet PDF文件第5页 
FLLD261  
3
HIGH CONDUCTANCE LOW LEAKAGE DIODE  
PACKAGE  
TO-236AB (Low)  
PD . . . .350 mW @ TA = 25 Deg C  
BV . . . .200 V (MIN) @ IR = 5 uA  
P8A  
ABSOLUTE MAXIMUM RATINGS (NOTE 1)  
1
2
TEMPERATURES  
Storage Temperature  
Operating Junction Temperature  
-55 to +150 Degrees C  
-55 to +150 Degrees C  
CONNECTION DIAGRAMS  
3
POWER DISSIPATION (NOTES 2 & 3)  
Total Device Dissipation at TA = 25 Deg C  
Derating Factor per Degree C  
350 mW  
2.8 mW  
1
2
VOLTAGES & CURRENTS  
WIV  
IO  
IF  
Working Inverse Voltage  
Average Rectified Current  
DC Forward Current  
100 V  
250 mA  
600 mA  
700 mA  
if  
Recurrent Peak Forward Current  
if (surge) Peak Forward Surge Current  
Pulse width = 1 second  
1.0 A  
3.0 A  
Pulse width = 1 microsec  
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)  
SYM  
BV  
CHARACTERISTICS  
Breakdown Voltage  
MIN  
MAX UNITS  
TEST CONDITIONS  
200  
V
IR =  
5.0 uA  
IR  
Reverse Voltage Leakage Current  
5.0  
5.0  
nA  
uA  
VR = 100 V  
VR = 100 V  
TA = 150 Deg C  
f = 1.0 MHZ  
VF  
CT  
Forward Voltage  
1.40  
4.0  
V
IF = 200 mA  
VR = 1.0 V  
Diode Capacitance  
Reverse Recovery Time  
pF  
ns  
TRR  
400  
IF = IR = 50 to 400 mA  
IRR = 10% IR RL = 100 ohms  
TFR  
Forward Recovery Time  
Peak Forward Voltage  
10  
ns  
V
IF =  
10 mA  
10 mA  
VFM  
0.9  
IF =  
Typ  
Rise Time = 5 ns +/-20%  
NOTES:  
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  

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