FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P
= 42.5dBm (Typ.)
1dB
= 13.0dB (Typ.)@1.8GHz (FLL200IB-1)
• High Gain: G
1dB
= 34% (Typ.)
• High PAE: η
add
• Proven Reliability
• Hermetically Sealed Package
DESCRIPTION
The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that
are specifically designed to provide high power at L-Band frequencies
with gain, linearity and efficiency superior to that of silicon devices.
The performance in multitone environments for Class AB operation make
them ideally suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Unit
Rating
Drain-Source Voltage
Gate-Source Voltage
V
V
15
-5
V
V
DS
GS
T = 25°C
c
Total Power Dissipation
Storage Temperature
Channel Temperature
P
83.3
-65 to +175
175
W
°C
°C
T
T
stg
T
ch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 10 volts.
DS
2. The forward and reverse gate currents should not exceed 53.6 and -11.6 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (T ) should not exceed 145°C.
ch
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limit
Typ.
Item
Symbol
Test Conditions
Unit
Min.
Max.
V
V
V
= 5V, V
= 0V
GS
Saturated Drain Current
Transconductance
I
-
8
12
-
A
DS
DS
DS
DSS
g
= 5V, I
= 4800mA
m
-
4000
-2.0 -3.5
mS
V
DS
Pinch-off Voltage
V
= 5V, I
DS
= 480mA
-1.0
p
Gate Source Breakdown Voltage
FLL200IB-1
V
-
-
-
I
= -480µA
-5
V
GSO
GS
f=1.5GHz
f=2.3GHz
f=2.6GHz
f=1.5GHz
Output Power
FLL200IB-2
P
1dB
41.5 42.5
dBm
at 1dB G.C.P.
FLL200IB-3
V
I
= 10V
DS
= 0.6 I
-
-
FLL200IB-1
12.0 13.0
10.0 11.0
10.0 11.0
dB
dB
dB
A
DS
DSS
Power Gain
FLL200IB-2
at 1dB G.C.P.
(Typ.)
f=2.3GHz
f=2.6GHz
G
1dB
FLL200IB-3
-
I
Drain Current
-
-
-
-
4.8
34
1.6
-
6.0
dsr
V
I
= 10V
DS
= 0.6 I
η
DS
DSS (Typ.)
-
%
°C/W
°C
Power added Efficiency
Thermal Resistance
add
1.8
80
R
Channel to Case
10V x I r x R
th
∆T
Channel Temperature Rise
CASE STYLE: IB
ch
ds
th
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1