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FJAFS1510A PDF预览

FJAFS1510A

更新时间: 2024-09-16 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
12页 736K
描述
ESBC™ Rated NPN Power Transistor

FJAFS1510A 数据手册

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November 2012  
FJAFS1510A  
ESBCRated NPN Power Transistor  
Applications  
Description  
• High-Voltage and High-Speed Power Switches  
The FJAFS1510A is a low-cost, high-performance power  
switch designed to provide optimal performance when  
used in an ESBC™ configuration in applications such as:  
power supplies, motor drivers, smart grid, or ignition  
switches. The power switch is designed to operate up to  
1550 volts and up to 6amps, while providing exceptionally  
low on-resistance and very low switching losses.  
• Emitter-Switched Bipolar/MOSFET Cascodes  
(ESBC™)  
• Smart Meters, Smart Breakers, SMPS,  
HV Industrial Power Supplies  
• Motor Drivers and Ignition Drivers  
The ESBC™ switch is designed to be driven using off-  
the-shelf power supply controllers or drivers. The  
ESBC™ MOSFET is a low-voltage, low-cost, surface-  
mount device that combines low-input capacitance and  
fast switching. The ESBC™ configuration further mini-  
mizes the required driving power because it does not  
have Miller capacitance.  
ESBC Features (FDC655 MOSFET)  
VCS(ON)  
IC  
Equiv. RCS(ON)  
0.426 V  
6 A  
0.071 Ω(1)  
• Low Equivalent On Resistance  
• Very Fast Switch: 150 kHz  
• Avalanche Rated  
The FJAFS1510A provides exceptional reliability and a  
large operating range due to its square Reverse-Bias-  
Safe-Operating-Area (RBSOA) and rugged design. The  
device is avalanche rated and has no parasitic transistors  
so is not prone to static dv/dt failures.  
• Low Driving Capacitance, No Miller Capacitance  
• Low Switching Losses  
• Reliable HV switch: No False Triggering due to  
High dv/dt Transients  
The power switch is manufactured using a dedicated  
high-voltage bipolar process and is packaged in a high-  
voltage TO-3PF package.  
C
2
C
E
FJAFS1510A  
FDC655  
B
G
1
B
3
TO-3PF  
1
S
1.Base 2.Collector 3.Emitter  
Figure 3. ESBC Configuration(2)  
Figure 1. Pin Configuration  
Figure 2. Internal Schematic Diagram  
Ordering Information  
Part Number  
FJAFS1510ATU  
Marking  
J1510A  
Package  
TO-3PF  
Packing Method  
TUBE  
Remarks  
Notes:  
1. Figure of Merit.  
2. Other Fairchild MOSFETs can be used in this ESBC application.  
© 2012 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FJAFS1510A Rev. A2  
1

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