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FJC1308R PDF预览

FJC1308R

更新时间: 2024-01-22 23:02:20
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
5页 441K
描述
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89, 3 PIN

FJC1308R 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-89包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.34
最大集电极电流 (IC):3 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):180
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

FJC1308R 数据手册

 浏览型号FJC1308R的Datasheet PDF文件第2页浏览型号FJC1308R的Datasheet PDF文件第3页浏览型号FJC1308R的Datasheet PDF文件第4页浏览型号FJC1308R的Datasheet PDF文件第5页 
July 2005  
FJC1308  
PNP Epitaxial Silicon Transistor  
Audio Power Amplifier Applications  
Complement to FJC1963  
High Collector Current  
Low Collector-Emitter Saturation Voltage  
Marking  
1 3  
P Y  
0 8  
W W  
SOT-89  
1
Weekly code  
1. Base 2. Collector 3. Emitter  
Year code  
hFE grage  
Absolute Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VCBO  
Parameter  
Collector-Base Voltage  
Value  
-30  
Units  
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-30  
V
-6  
V
Collector Current (DC)  
Power Dissipation(TC=25°C)  
Junction Temperature  
Storage Temperature  
-3  
A
PC  
0.5  
W
°C  
°C  
TJ  
150  
TSTG  
- 55 ~ 150  
Electrical Characteristics TC = 25°C unless otherwise noted  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICEO  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
IC = -50µA, IE = 0  
-30  
-30  
-6  
V
IC = -1mA, IB = 0  
V
IE = -50µA, IC = 0  
VCE = -20V, VB = 0  
VEB = -5V, IC = 0  
V
-0.5  
-0.5  
390  
µA  
µA  
IEBO  
Emitter Cut-off Current  
hFE  
DC Current Gain  
VCE = -2V, IC= -0.5A  
IC =-1.5, IB = -0.15A  
IC = -1.5, IB = -0.15A  
80  
V
V
CE(sat)  
BE(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
-0.45  
-1.5  
V
V
©2005 Fairchild Semiconductor Corporation  
FJC1308 Rev. B1  
1
www.fairchildsemi.com  

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