Datasheet > FJC1386_05

FJC1386_05

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	439K
描述
PNP Epitaxial Silicon Transistor

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数据手册

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FJC1386_05 数据手册

July 2005

FJC1386

PNP Epitaxial Silicon Transistor

Low Saturation Transistor Medium Power Amplifier

•

Complement to FJC2098

High Collector Current

Low Collector-Emitter Saturation Voltage

Marking

1 3

8 6

P Y

W W

SOT-89

Weekly code

Year code

h_FEgrage

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

-30

-20

-6

V_CEO

V_EBO

I_C

-5

P_C

Power Dissipation (T_a= 25°C)

Junction Temperature

0.5

150

°C

T_J

T_STG

Storage Temperature

-55 to +150

Electrical Characteristics T_a= 25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Cutoff Current

Test Condition

Min.

Max.

Units

I_C= -50µA, I_E= 0

-30

-20

-6

I_C= -1mA, I_B= 0

I_E= -50µA, I_C= 0

V_CB= -20V, V_B= 0

V_EB= -5V, I_C= 0

-0.5

390

-1.0

-1.5

µA

I_EBO

Emitter-Cutoff Current

h_FE

DC Current Gain

V_CE= -2V, I_C=-0.5A

I_C= -4A, I_B= -0.1A

V_{CE (sat)}

V_{BE (sat)}

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

FJC1386 Rev. C1

www.fairchildsemi.com

12 3 4 5

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