Datasheet > FJC1963_05

FJC1963_05

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	436K
描述
NPN Epitaxial Silicon Transistor

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数据手册

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FJC1963_05 数据手册

July 2005

FJC1963

NPN Epitaxial Silicon Transistor

Audio Power Amplifier Applications

•

Complement to FJC1308

High Collector Current

Low Collector-Emitter Saturation Voltage

Marking

1 9

6 3

P Y

W W

SOT-89

Weekly code

1. Base 2. Collector 3. Emitter

Year code

h_FEgrage

Absolute Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_CBO

Parameter

Collector-Base Voltage

Value

Units

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Power Dissipation(T_C=25°C)

Junction Temperature

Storage Temperature

P_C

0.5

°C

T_J

150

T_STG

- 55 ~ 150

Electrical Characteristics T_C=25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CEO

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Max.

Units

I_C= 50µA, I_E= 0

I_C= 1mA, I_B= 0

I_E= 50µA, I_C= 0

V_CE= 40V, V_B= 0

V_EB= 5V, I_C= 0

0.5

µA

I_EBO

Emitter Cut-off Current

h_FE

DC Current Gain

V_CE= 2V, I_C= 0.5A

I_C= 1.5, I_B= 0.15A

120

560

0.45

1.2

_CE(sat)

_BE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

FJC1963 Rev. B1

www.fairchildsemi.com

12 3 4 5

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